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Ohmic Contact Behavior of Pt/Ni/Au to p-ZnO

Published online by Cambridge University Press:  01 February 2011

Ji-Myon Lee ,
Kyoung-Kook Kim ,
Hitoshi Tampo ,
Akimasa Yamada  and
Shigeru Niki
Ji-Myon Lee
Affiliation:
[email protected], Sunchon National University, Materials Science and Metallurgical Engineering, 315 Maegok-dong, Sunchon, Chonnam, 540-742, Korea, Republic of, 82-61-750-3550
Kyoung-Kook Kim
Affiliation:
[email protected], AIST, Tsukuba, Ibaraki, 305-8568, Japan
Hitoshi Tampo
Affiliation:
[email protected], AIST, Tsukuba, Ibaraki, 305-8568, Japan
Akimasa Yamada
Affiliation:
[email protected], AIST, Tsukuba, Ibaraki, 305-8568, Japan
Shigeru Niki
Affiliation:
[email protected], AIST, Tsukuba, Ibaraki, 305-8568, Japan
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Abstract

The electrical properties of single Pt (30 nm) and Pt (30 nm)/Ni (30nm)/Au(50nm) multilayer contacts on moderately doped p-ZnO (Na = 5.0 × 1017 /−3) were investigated. Although linear current-voltage characteristics were observed for all samples, a sample that was annealed for 1 min at a temperature above 500 °C resulted in an ohmic contact with good characteristics. The best ohmic contact to p-type ZnO was obtained using a Pt/Ni/Au multilayer contact that was annealed at 600 °C for 1 min under a N2 ambient, showing a specific contact resistance Rc of 1.97 × 10−5 Ω cm2. The fundamental mechanisms for the lower contact resistivity of Pt/Ni/Au contacts are discussed based on glancing angle x-ray diffraction results and Auger depth profile analysis of the multilayer alloying process. Furthermore, we fabricated a ZnO p-n homojunction using Pt/Ni/Au and Ti/Au as the p-type and n-type ohmic contact metal, respectively. The threshold voltage was determined to be about 3.7 V, comparable to the bandgap energy of ZnO.

Keywords

semiconductingoxideelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 928: Symposium GG – Current and Future Trends of Functional Oxide Films , 2006 , 0928-GG09-12
Copyright
Copyright © Materials Research Society 2006

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