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Observation of Semiconductor Superstructures With Backscattered Electrons in a Scanning Electron Microscope
Published online by Cambridge University Press: 21 February 2011
Abstract
Observations of semiconductor superstructures with backscattered electrons in a scanning electron microscope have been used to revisit the concept of resolution of the backscattering imaging mode. It will be shown that the generation volume doesn't represent in itself a limit to the resolution, which depends only on the beam size and the signal to noise ratio.
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- Copyright © Materials Research Society 1995