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Observation of Rheed Intensity Oscillations During PbSe/CaF2/Si(111) MBE

Published online by Cambridge University Press:  10 February 2011

W. K. Liu ,
X. M. Fang ,
P. J. McCann  and
M. B. Santos
W. K. Liu
Affiliation:
Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, OK 73019
X. M. Fang
Affiliation:
School of Electrical and Computer Engineering and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, OK 73019
P. J. McCann
Affiliation:
School of Electrical and Computer Engineering and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, OK 73019
M. B. Santos
Affiliation:
Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, OK 73019
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Abstract

RHEED intensity oscillations observed during MBE growth of CaF2 on Si(111) and PbSe on CaF2/Si(111) are presented. The effects of substrate temperature and initial nucleation procedure are investigated. Strong temporal oscillations of the specular beam intensity are found to be most readily observed at temperatures below 200°C for both CaF2 and PbSe. Growth rates measured as a function of cell temperatures exhibit Arrhenius behavior with activation energies of 5.0 eV and 1.93 eV for CaF2 and PbSe, respectively. The relatively high activation energy obtained for CaF2 is consistent with the high melting point and sublimation energy of ionic fluorides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 51
Copyright
Copyright © Materials Research Society 1997

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