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Observation of Retarded Recombination in ChargeSeparation Structures

Published online by Cambridge University Press:  01 February 2011

R. K. Ahrenkiel ,
D. Friedman ,
W. K. Metzger ,
M. Page  and
J. Dashdorj
R. K. Ahrenkiel
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
D. Friedman
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
W. K. Metzger
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
J. Dashdorj
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
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Abstract

Measurement of recombination and minority-carrier lifetimes has become a very common activity in current semiconductor technology. The two primary measurement techniques are based on photoconductive decay (PCD) and time-resolved photoluminescence (TRPL). The measurement of the “true” lifetime depends on the carriers being confined to a given spatial region of a diagnostic device. When internal electric fields exist that separate the charges, the measured value does not represent the real minority-carrier lifetime. In these cases, the measured quantity is a function of the true lifetime and the measurement technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z4.6
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Samuelson, L., Pistol, M.-E. and Nillson, S., Phys. Rev. B33, 9776 (1986).Google Scholar
2. Gossick, B. R., J. Appl. Phys. 26, 1356 (1955).Google Scholar
3. Lindholm, F. A. and Sah, C. T., J. Appl. Phys. 47, 4203 (1976).Google Scholar
4. Dhariwal, S. R., Kothari, L. S., and Jain, S. C., Solid-State Electronics 20, 297 (1977).Google Scholar
5. Mahan, J. E., Ekstedt, T. W., Fran, R. I., and Kaplow, R., IEEE Transactions on Electron Devices, ED–26, 733 (1979).Google Scholar
6. Gopal, R., Dwivendi, R., and Srinvastava, S. K., J. Appl. Phys. 58, 3476 (1985).Google Scholar
7. Dashdorj, J., Ahrenkiel, R. K., and Metzger, W. (this conference).Google Scholar
8. Ahrenkiel, R. K. and Johnston, S. W., Materials Science and Engineering B102, 161–172 (2003).Google Scholar
9. M'Saad, H., Norga, G. J., Michel, J., and Kimmerling, L. C., AIP Conference Proceedings V306, AIP Press, New York, 1994, p 471.Google Scholar
10. Boulou, M. and Bois, D., J. Appl. Phys. 48, 4713 (1977).Google Scholar