Hostname: page-component-745bb68f8f-b6zl4 Total loading time: 0 Render date: 2025-02-05T06:05:53.263Z Has data issue: false hasContentIssue false
  • English
  • Français

Observation of Radiation-Induced Defect Formation in Aluminum by High-Resolution Transmission Electron Microscopy

Published online by Cambridge University Press:  28 February 2011

James M. Howe  and
Mehmet Sarikaya
James M. Howe
Affiliation:
Department of Metallurgical Engineering and Materials Science, Carnegie Mellon University, Pittsburgh, PA 15213
Mehmet Sarikaya
Affiliation:
Department of Materials Science and Engineering, University of Washington, Seattle, WA
Get access

Abstract

High-resolution transmission electron microscopy was used to investigate the structure and growth kinetics of early-stage radiation-induced defects in commercially pure Al. The majority of defects were determined to be single and multiple interstitial Frank-partial loops, although some perfect dislocation loops and vacancy loops were also observed. The growth rates of loops with final radii less than 8 nm were recorded in situ and were found to be approximately 0.2 nm/sec for an electron density of about 8×1018 electrons/cm2.sec. These results are similar to previous high-voltage electron microscope analyses performed on larger radiation-induced defects in Al alloys.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 41
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Eyre, B. L., J. Phys. F: Metal Phys. a, 422 (1973).Google Scholar
2. Yoshida, H., Ann. Rep. Res. Reactor Inst. Kyoto 12, 83 (1979).Google Scholar
3. Bullough, R., in Dislocations and Properties of Real Materials (The Inst. of Metals, London 1985) p. 283.Google Scholar
4. Articles in High-Resolution Electron Microscopy, edited by Buseck, P. R. (North-Holland, Amsterdam 1985).Google Scholar
5. Howe, J. M. and Mahon, G. J., Ultramicroscopy, in press.Google Scholar
6. Howe, J. M. and Sarikaya, M., submitted to Philos. Mag. A.Google Scholar
7. Howe, J. M., Dahmen, U. and Gronsky, R., Phil. Mag. A 51(1), 31 (1987).CrossRefGoogle Scholar
8. Wolfenden, A., Radiation Effects 21, 197 (1974).CrossRefGoogle Scholar
9. Yoshida, N. and Kiritani, M., J. Phys. Soc. Japan 35(3), 1418 (1973).CrossRefGoogle Scholar
10. Goodhew, P. J., Dobson, P. S. and Smaliman, R. E., Metal Sci. J. 1, 198 (1967).CrossRefGoogle Scholar
11. Hull, D. and Bacon, D. J., Introduction to Dislocations. 3rd Ed. (Pergamon Press, Oxford 1984) p. 106.Google Scholar
12. Kiritani, M., Yoshida, N. and Takata, H., J. Phys. Soc. Japan 36(3), 720 (1974).Google Scholar
13. Kiritani, M., Yoshida, N., Takata, H. and Maehara, Y., J. Phys. Soc. Japan 38(6), 1677 (1975).Google Scholar
14. Coene, W., Bender, H. and Amelinckx, S., Phil. Mag. A 52(3), 369 (1985).CrossRefGoogle Scholar
15. Eyre, B. L. and Maher, D. M., Phil. Mag. 24, 767 (1971).Google Scholar
16. Jaeger, W. and Wilkens, M., phys. stat. sol. (a) 32, 89 (1975).Google Scholar