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Observation of Metastability in Amorphous Silicon Containing 0.1 at.% Hydrogen

Published online by Cambridge University Press:  21 February 2011

Howard M. Branz  and
Eugene Iwaniczko
Howard M. Branz
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Eugene Iwaniczko
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
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Abstract

We observe reversible quenched-in metastability in the dark conductivity of extremely low-H-content amorphous silicon (a-Si). The sample is sputtered, P-implanted a-Si containing 0.1 at.% of H. Except for the high value of its equilibration temperature (T*), 355° ± 20°C, this metastability is similar to that observed in doped hydrogenated a-Si (a-Si:H). The ∼10 at.% H present in a-Si:H is not essential for a-Si metastability. After hydrogenation with about 10 at.% of H, T* falls to 175° ± 10°C. We propose that higher H content reduces T* by increasing Si network flexibility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 389
Copyright
Copyright © Materials Research Society 1992

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References

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