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Observation of Intrusion Rates of Hexamethyldisilazane During Supercritical Carbon Dioxide Functionalization of Triethoxyfluorosilane Low-k Films

Published online by Cambridge University Press:  01 February 2011

P.M. Capani ,
P.D. Matz ,
D.W. Mueller ,
M.J. Kim ,
E.R. Walter ,
J.T. Rhoad ,
E.L. Busch  and
R.F. Reidy
P.M. Capani
Affiliation:
Dept. of Materials Science and Engineering, University of North Texas, Denton TX 76203
P.D. Matz
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243
D.W. Mueller
Affiliation:
Dept of Physics, University of North Texas, Denton TX 76203
M.J. Kim
Affiliation:
Dept of Electrical Engineering, University of Texas at Dallas, Richardson, TX 75083
E.R. Walter
Affiliation:
Dept of Physics, University of North Texas, Denton TX 76203
J.T. Rhoad
Affiliation:
Sematech, Austin TX 78741
E.L. Busch
Affiliation:
Sematech, Austin TX 78741
R.F. Reidy
Affiliation:
Dept. of Materials Science and Engineering, University of North Texas, Denton TX 76203
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Abstract

Water adsorption by porous low-k silica films results in increased dielectric constants and is often due to silanol groups on the pore surfaces. Reacting the silanols with silylating agents (e.g., hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS)) in supercritical CO2 (SC-CO2) can increase film hydrophobicity and can remove adsorbed water. In porous methylsilsesquioxane (MSQ) films (average pore size ∼ 3-4nm), it has been determined that supercritical silylation reactions do not substantially penetrate beyond the film surface.1,2 In this work we have examined the supercritical penetration behavior of silylating agents in low-k films with larger pore sizes (5-10nm). The depth and extent of reactants was determined by in situ infrared spectroscopy (FTIR), and surface hydrophobicity was examined by contact angle experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 863: Symposium B – Materials, Technology and Reliability of Advanced Interconnects , 2005 , B2.7
Copyright
Copyright © Materials Research Society 2005

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References

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