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Observation of Domain Switching in Fatigued Epitaxial Pb(Zr,Ti)O3 Thin Films

Published online by Cambridge University Press:  26 February 2011

Yong Kwan Kim ,
Shintaro Yokoyama ,
Risako Ueno ,
Hitoshi Morioka ,
Osami Sakata ,
Shigeru Kimura ,
Keisuke Saito  and
Hiroshi Funakubo
Yong Kwan Kim
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Innovative and Engineered Materials, 4259 Nagatsuta-cho, Midori-ku,, Yokohama, 226 8502, Japan, +81-45-924-5446, +81-45-924-5446
Shintaro Yokoyama
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Innovative and Engineered Materials, Japan
Risako Ueno
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Innovative and Engineered Materials, Japan
Hitoshi Morioka
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Innovative and Engineered Materials, Japan
Osami Sakata
Affiliation:
[email protected], Japan Synchrotron Radiation Research Institute/ SPring-8, Research & Utilization Division, Japan
Shigeru Kimura
Affiliation:
[email protected], Japan Synchrotron Radiation Research Institute/ SPring-8, Research & Utilization Division, Japan
Keisuke Saito
Affiliation:
[email protected], Bruker AXS, Application Laboratory, Jordan
Hiroshi Funakubo
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Innovative and Engineered Materials, Japan
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Abstract

We performed x-ray diffraction measurements by using highly brilliant synchrotron radiation on epitaxial Pb(Zr0.35Ti0.65)O3 film capacitor structures. Small regions of 300-nm-thick epitaxial Pb(Zr,Ti)O3 thin films with Pt and SrRuO3 top electrodes were measured after applying various numbers of switching cycles of the electric field. Epitaxial Pb(Zr,Ti)O3 thin films were prepared on epitaxial (100)cSrRuO3/(100)SrTiO3 substrates by pulsed-metalorganic chemical vapor deposition. The volume faction of c-domain and remanent polarization was plotted against the number of switching cycles. In the both capacitors, the Vc increased as the switching cycle increased independent of fatigue behavior.

Keywords

fatigueferroelectricfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T10-67
Copyright
Copyright © Materials Research Society 2006

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References

1 Adachi, H. and Wasa, K., IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control 38, 645 (1991).Google Scholar
2 Dimos, D., Annul. Rev. Mater. Sci. 251, 273 (1995).Google Scholar
3 Ramesh, R., Sands, T., and Keramidas, V. G., Appl. Phys. Lett. 63, 731 (1993).Google Scholar
4 de Kaijser, M., Cillessen, J. F. M., Janssen, R. B. F., de Veirman, A. E. M., and de Leeuw, D. M., J. Appl. Phys. 79, 393 (1996).Google Scholar
5 Kwak, B. S., Erbil, A., Budai, J. D., Chisholm, M. F., Boatner, L. A., and Wilkens, B.J., Phys. Rev. B 49, 14 865 (1994).Google Scholar
6 Speck, J. S. and Pompe, W., J. Appl. Phys. 76, 466 (1994).Google Scholar
7 Kim, Y. K., Lee, K., and Baik, S., J. Appl. Phys. 95, 236 (2004).Google Scholar
8 Lee, K. S., Kim, Y. K., Kim, J., Jung, I. S., and Baik, S., Appl. Phys Lett. 79, 2444 (2001).Google Scholar
9 Nagasima, K, Aratani, M., and Funakubo, H., Jpn. J. Appl. Phys. 39, L996 (2000).Google Scholar
10 Sakata, O., Furukawa, Y., Goto, S., Mochizuki, T., Uruga, T., Takeshita, K., Ohashi, H., Ohata, T., Matsushita, T., Takahashi, S., Tajiri, H., Ishikawa, T., Nakamura, M., Ito, M., Sumitani, K., Takahashi, T., Shimura, T., Saito, A., and Takahasi, M., Surf. Rev. Lett. 10, 543 (2003).Google Scholar
11 Kimura, S., Izumi, K., and Tatsumi, T., Appl. Phys. Lett. 80, 2365 (2002).Google Scholar
12 Kim, Y. K., Morioka, H., Ueno, R., Yokoyama, S., Lee, K., Baik, S., and Funakubo, H., Appl. Phys. Lett. SubmittedGoogle Scholar
13 Colla, E. L., Taylor, D.V., Tagantsev, A. K., and Setter, N., Appl. Phys. Lett. 72, 2478 (1998).Google Scholar
14 Tagantsev, A. K., Stolichnov, I., Colla, E. L., and Setter, N., J. Appl. Phys. 90, 1387 (2001).Google Scholar