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Observation and Measurement of Atomic Scale Imperfections in Materials Using CBED+EBI/H

Published online by Cambridge University Press:  21 February 2011

Rodney A. Herring ,
John E. Bonevich ,
Takayoshi Tanji  and
Akira Tonomura
Rodney A. Herring
Affiliation:
Tonomura Electron Wavefront Project, ERATO, JRDC, P.O. Box 5, Hatoyama, Saitama 350-03, Japan
John E. Bonevich
Affiliation:
Tonomura Electron Wavefront Project, ERATO, JRDC, P.O. Box 5, Hatoyama, Saitama 350-03, Japan
Takayoshi Tanji
Affiliation:
Tonomura Electron Wavefront Project, ERATO, JRDC, P.O. Box 5, Hatoyama, Saitama 350-03, Japan
Akira Tonomura
Affiliation:
Tonomura Electron Wavefront Project, ERATO, JRDC, P.O. Box 5, Hatoyama, Saitama 350-03, Japan
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Abstract

A new method of electron interferometry/holography (CBED+EBI/H) has been realized which produces interference between convergent beam electron diffracted beams. An electron biprism placed between the diffracted beams compensates for their diffraction angle by an induced potential. When overlaid the diffracted beams interfere to produce an interferogram. Holography is possible due to coherency of the electron beam. Reconstruction of the hologram by standard methods enables the phase change around the defects to be measured. These methods are very easy to apply and examples are given for small defects and defect clusters in heavy-ion implanted Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 332: Symposium U – Determining Nanoscale Physical Properties of Materials by Microscopy and Spectroscopy , 1994 , 231
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Gabor, D., Proc. R. Soc. London A197, 454 (1949); B64, 449 (1951).Google Scholar
2. Konforti, N., Maron, E. and Wu, S.T., Opt. Lett. 13, 251 (1988).Google Scholar
3. Kawasaki, T., Ru, Q.X., Matsuda, T., Bando, Y. and Tonomura, A., Jpn. J Appl. Phys. 30, 1830 (1991).Google Scholar
4. Hanszen, K.J., J. Phys. D: Appl. Phys. 19, 373 (1986).CrossRefGoogle Scholar
5. Möllenstedt, G. and Düker, H., Naturwissenschaften 42, 41 (1955).Google Scholar
6. Herring, R.A., Pozzi, G., Tanji, T. and Tonomura, A., Ultramicroscopy 50, 94 (1993).CrossRefGoogle Scholar
7. Herring, R.A., Pozzi, G., Tanji, T. and Tonomura, A., Proc. 51st Ann. Meeting of MSA, Eds. Bailey, G.W. and Rieder, C.L., 1056 (1993).Google Scholar
8. Herring, R.A. and Tanji, T., Proc. 51st Ann. Meeting of MSA, Eds. Bailey, G.W. and Rieder, C.L., 1086 (1993).Google Scholar
9. Herring, R.A. et al. , Ultramicroscopy, To be submitted.Google Scholar
10. Humphreys, C.J., Eaglesham, D.J., Maher, D.M. and Fraser, H.L., Ultramicroscopy 26, 13 (1988).CrossRefGoogle Scholar
10. Thompson, J. and Wolf, E., J. Optical Soc. of Am. 47, 895 (1957).Google Scholar
11. Herring, R.A. and Fiore, E., Mater. Res. Soc. Symp. Proc. 100, 441 (1988).CrossRefGoogle Scholar