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Oblique-incidence Reflectivity Difference (OI-RD) and Leed Studies of Adsorption and Growth of Xe on Nb(110)

Published online by Cambridge University Press:  15 February 2011

P. Thomas ,
E. Nabighian ,
M.C. Bartelt ,
C.Y. Fong  and
X.D. Zhu
P. Thomas
Affiliation:
Department of Physics, University of California, Davis, California 95616, USA
E. Nabighian
Affiliation:
Department of Physics, University of California, Davis, California 95616, USA
M.C. Bartelt
Affiliation:
Department of Chemistry and Materials Sciences, Lawrence Livermore National Laboratory, Livermore, CA 94550, USA
C.Y. Fong
Affiliation:
Department of Physics, University of California, Davis, California 95616, USA
X.D. Zhu
Affiliation:
Department of Physics, University of California, Davis, California 95616, USA
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Abstract

We studied adsorption, growth and desorption of Xe on Nb(110) using an in-situ obliqueincidence reflectivity difference (OI-RD) technique and low energy electron diffraction (LEED) from 32 K to 100 K. The results show that Xe grows a (111)-oriented film after a transition layer is formed on Nb(110). The transition layer consists of three layers. The first two layers are disordered with Xe-Xe separation significantly larger than the bulk value. The third monolayer forms a close packed (111) structure on top of the tensile-strained double layer and serves as a template for subsequent homoepitaxy. The adsorption of the first and the second layers are zeroth order with sticking coefficient close to one. Growth of the Xe(111) film on the transition layer proceeds in a step flow mode from 54K to 40K. At 40K, an incomplete layer-by-layer growth is observed while below 35K the growth proceeds in a multilayer mode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 780: Symposium Y – Advanced Optical Processing of Materials , 2003 , Y3.11
Copyright
Copyright © Materials Research Society 2003

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References

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