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Oblique Stacking of Three-Dimensional Dome Islands in Ge/Si Multilayers

Published online by Cambridge University Press:  17 March 2011

P. Sutter ,
E. Sutter  and
L. Vescan
P. Sutter
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401, USA
E. Sutter
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401, USA
L. Vescan
Affiliation:
Institut für Schicht & Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
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Abstract

The organization of Ge ‘dome’ islands in Ge/Si multilayers has been investigated by cross-sectional transmission electron microscopy. Ge ‘domes’ are found to spontaneously arrange in oblique stacks, replicating at a well-defined angle from one bilayer to the next. The formation of oblique island stacks is governed by a complex interplay of surface strain - generated by the already buried islands - and surface curvature - caused by the inherent tendency of large ‘domes’ to carve out material from the surrounding planar substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P8.4
Copyright
Copyright © Materials Research Society 2001

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