Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-01-14T02:35:56.205Z Has data issue: false hasContentIssue false
  • English
  • Français

Numerical Study of Scaling Issues in Graphene Nanoribbon Transistors

Published online by Cambridge University Press:  30 August 2011

Man-Tieh Chen  and
Yuh-Renn Wu
Man-Tieh Chen
Affiliation:
Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, 10617.
Yuh-Renn Wu*
Affiliation:
Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, 10617.
*
*Corresponding author: [email protected]
Get access

Abstract

This paper addresses scaling issues in graphene nanoribbon transistors (GNRFETs) by using a two-dimensional (2-D) Poisson and drift-diffusion solver with finite element method (FEM). GNRFETs with the back gate control and the channel width down to less than 5nm have been reported to have Ion=Ioff ratio up to 106. Our simulations show an agreement with the published experimental work and show a potential to reach unit current gain cut-off frequency, fT , up to more than 1THz with a satisfying Ion=Ioff ratio at the same time. This makes GNRFETs attractive for high speed logic.

Keywords

simulationcarbonizationnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1344: Symposium Y – Functional Two-Dimensional Layered Materials—From Graphene to Topological Insulators , 2011 , mrss11-1344-y03-23
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., and Firsov, A. A. Science 306(5696), 666–669 (2004).Google Scholar
[2] Geim, A. K. and Novoselov, K. S. Nat Mater 6(3), 183–191 March (2007).Google Scholar
[3] Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., and Geim, A. K. Rev. Mod. Phys. 81(1), 109–162 Jan (2009).Google Scholar
[4] Avouris, P., Lin, Y., Xia, F., Farmer, D., Mueller, T., Dimitrakopoulos, C., and Jenkins, K. In 2010 IEEE International Electron Devices Meeting, (2010).Google Scholar
[5] Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., and Neto, A. H. C. Phys. Rev. Lett. 99(21), 216802 Nov (2007).Google Scholar
[6] Gava, P., Lazzeri, M., Saitta, A. M., and Mauri, F. Phys. Rev. B 79(16), 165431 Apr (2009).Google Scholar
[7] Zhou, S., Siegel, D., Fedorov, A., Gabaly, F., Schmid, A., Neto, A. C., Lee, D.-H., and Lanzara, A. Nat Mater 7(4), 259–260 April (2008).Google Scholar
[8] Kim, S., Ihm, J., Choi, H. J., and Son, Y.-W. Phys. Rev. Lett. 100(17), 176802 Apr (2008).Google Scholar
[9] Yavari, F., Kritzinger, C., Gaire, C., Song, L., Gulapalli, H., Borca-Tasciuc, T., Ajayan, P. M., and Koratkar, N. Small 6(22), 2535–2538 (2010).Google Scholar
[10] Pereira, V. M., Castro Neto, A. H., and Peres, N. M. R. Phys. Rev. B 80(4), 045401 Jul (2009).Google Scholar
[11] Balog, R., Jorgensen, B., Nilsson, L., Andersen, M., Rienks, E., Bianchi, M., Fanetti, M., Laegsgaard, E., Baraldi, A., Lizzit, S., Sljivancanin, Z., Besenbacher, F., Hammer, B., Pedersen, T. G., Hofmann, P., and Hornekaer, L. Nat Mater 9(4), 315–319 April (2010).Google Scholar
[12] Son, Y.-W., Cohen, M. L., and Louie, S. G. Phys. Rev. Lett. 97(21), 216803 Nov (2006).Google Scholar
[13] Wang, X. R., Ouyang, Y. J., Li, X. L., Wang, H. L., Guo, J., and Dai, H. J. Physical Review Letters 100(20), 206803 May (2008).Google Scholar
[14] Lam, K.-T., Seah, D., Chin, S.-K., Bala Kumar, S., Samudra, G., Yeo, Y.-C., and Liang, G. Electron Device Letters, IEEE 31(6), 555 –557 (2010).Google Scholar
[15] Zhang, Q., Fang, T., Xing, H., Seabaugh, A., and Jena, D. Electron Device Letters, IEEE 29(12), 1344 –1346 (2008).Google Scholar
[16] Shishir, R. S. and Ferry, D. K. Journal of Physics-condensed Matter 21(34), 344201 August (2009).Google Scholar
[17] Chauhan, J. and Guo, J. Applied Physics Letters 95(2), 023120 July (2009).Google Scholar
[18] Bresciani, M., Palestri, P., Esseni, D., and Selmi, L. Solid-State Electronics 54(9), 1015 – 1021 (2010).Google Scholar
[19] Fang, T., Konar, A., Xing, H., and Jena, D. Phys. Rev. B 78(20), 205403 Nov (2008).Google Scholar
[20] Zeng, L., Liu, X., Du, G., Kang, J., and Han, R. In International Conference on Simulation of Semiconductor Processes and Devices, (2009).Google Scholar
[21] Wu, Y.-R., Singh, M., and Singh, J. IEEE Trans. Electron Devices 53, 588–593 (2006).Google Scholar
[22] Wu, Y.-R. and Singh, J. Journal of Applied Physics 101(11), 113712 (2007).Google Scholar