Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-04T19:11:12.320Z Has data issue: false hasContentIssue false
  • English
  • Français

Numerical Simulation of Scanning Speed and Supercooling Effects During Zone-Melting-Recrystallization of Soi Wafers

Published online by Cambridge University Press:  26 February 2011

Sharon M. Yoon  and
Loannis N. Miaoulis
Sharon M. Yoon
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Medford, Massachusetts 02155
Loannis N. Miaoulis*
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Medford, Massachusetts 02155
*
author to whom all correspondance should be addressed
Get access

Abstract

The effects of scanning speed and supercooling were studied during zone-meltingrecrystallization (ZMR) of silicon-on-insulator (SOI) wafers. Using finite difference methods, a numerical simulation of the ZMR process was developed which captures all of the optical and thermal property changes during phase transformation. The effects of supercooling and scanning speed on the temperature profiles, the total width of the melt-zone and the width of ‘slush’ region were investigated. The melt-zone width increases for increasiongf thdee gfrreeeezsi nogf supercooling and decreases for increasing strip heater velocities. The combined effects on the melt-zone width were shown for various scanning speeds and degrees of supercooling. Supercooling also had a significant effect on the size of the freezing ‘slush’ region which was shown to decrease for increasing degrees of supercooling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 205: Symposium F – Kinetics of Phase Transformations , 1990 , 453
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Miaoulis, I. N., in International Conference on Recrystallization in Metallic Materials (Recrystallization '90), edited by Chandra, T. (The Minerals, Metals and Materials Society, Warrendale, PA, 1990), p. 705.Google Scholar
2 Pfeiffer, L., Gelman, A. E., Jackson, K. A., West, K. W., and Batstone, J. L., Appl. Phys. Lett. 51, 1256 (1987).CrossRefGoogle Scholar
3 Im, J. S., Thompson, C. V., and Tomita, H., in Beam-Solid Interactions and Transient Processes (Proc. Mater. Res. Soc. Symp.), edited by Thompson, M. O., Picraux, S. T., and Williams, J. S. (Materials Research Society, Pittsburgh, PA, 1987), vol. 74, p. 555.Google Scholar
4 Im, J. S., Tomita, H., and Thompson, C. V., Appl. Phys. Lett. 51, 685 (1987).Google Scholar
5 Flemings, M. C., Solidification Processing, (McGraw-Hill Book Company, New York, 1974), p.58.Google Scholar
6 Leamy, H. J., Chang, C. C., Baumgart, H., Lemons, R. A., and Cheng, J., Mat. Lett. 1, 33 (1982).Google Scholar
7 Knight, C. A., The Freezing of Supercooled Liquids, (D. Van Nostrand Co., New Jersey, 1967), p. 85,101.Google Scholar
8 Lee, E. H., in Energy Beam-Solid Interactions and Transient Thermal Processing (Proc. Mater. Res. Soc. Symp.), edited by Biegelsen, D. K., Rozgonyi, G. A, and Shank, C. V. (Materials Research Society, Pittsburgh, PA, 1985) vol. 35, p. 563.Google Scholar
9 Dutartre, D., Haond, M., and Bensahel, D., J. Appl. Phys. 59, 632 (1986).Google Scholar
10 Im, J. S., Chen, C. K., Thompson, C.V., Geis, M. W., and Tomita, H., in Silicon-On-Insulator and Buried Metals in Semiconductors (Proc. Mater. Res. Soc. Symp.), edited by Stem, J. C., Chen, C. K., Pfeiffer, L., and Hemment, P. L. F. (Materials Research Society, Pittsburgh, PA, 1988) vol. 107, p. 169.Google Scholar
11 Fan, J. C. C., Tsaur, B-Y., and Chen, C. K., in Energy Beam-Solid Interactions and Transient Thermal Processing (Proc. Mater. Res. Soc. Symp.), edited by Fan, J. C. C. and Johnson, N. M. (Materials Research Society, Pittsburgh, PA, 1984) vol. 23, p. 477.Google Scholar
12 Mertens, p. W., Wouters, D. J., Maes, H. E., Deveirman, A., and Landuyt, J. Van, J. Appl. Phys. 63, 2660 (1988).Google Scholar
13 Pfeiffer, L., West, K. W., Joy, D. C., Gibson, J. M., Gelman, A. E., in Semiconductor-on-Insulator and Thin Film Transistor Technology (Proc. Mater. Res. Soc. Symp.), edited by Chiang, A., Geis, M. W., and Pfeiffer, L. (Materials Research Society, Pittsburgh, PA, 1986), vol. 53, p.29.Google Scholar
14 Lipman, J. D., Master's Thesis, Tufts University 1989.Google Scholar
15 Gerald, Curtis F. and Wheatly, Patrick O., Applied Numerical Analysis, Fourth Edition, (Addison-Wesley Publishing Company Inc., Reading, Massachusetts, 1989), p. 163.Google Scholar
16 Hottel, H. C. and Sarofim, A. F., Radiative Transfer, (McGraw-Hill, Inc., New York, 1967), p.37.Google Scholar
17 Gray, W. A. and Muller, R., Engineering Calculations in Radiative Heat Transfer, (Pergamon Press, New York, 1974), pp. 35–36.Google Scholar
18 Geis, M. W., Chen, C. K., Smith, Henry I., Nitishin, P. M., Tsaur, B-Y., and Mountain, R. W., in Semiconductor-on-Insulator and Thin Film Transistor Technology (Proc. Mater. Res. Soc. Symp.), edited by Chiang, A., Geis, M. W., and Pfeiffer, L. (Materials Research Society, Pittsburgh, PA, 1986), vol. 53, p.39.Google Scholar