Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-29T08:14:48.652Z Has data issue: false hasContentIssue false
  • English
  • Français

Numerical Modelling of Time-of-Flight in SCLC-Mode

Published online by Cambridge University Press:  15 February 2011

Rudolf Brüggemann  and
Gottfried H. Bauer
Rudolf Brüggemann
Affiliation:
FB Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, F.R. Germany
Gottfried H. Bauer
Affiliation:
FB Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, F.R. Germany
Get access

Abstract

The application of time-of-flight (TOF) in the space charge limited current (SCLC) mode to a-Si:H pin-diodes has led to the discovery of new features in the current transients. An alternative to analytic models, our numerical modelling describes the specific nature of amorphous semiconductors by taking into account the interaction of free carriers with tail states and the contribution of trapped carriers to the space charge. Typical features of experimental SCLC-TOF-currents such as a cusp in the transient can be reproduced. We confirm the concept of ‘effective thickness’ for the determination of the transit time. At high injection intensity only a small fraction of the charge can be collected. Bimolecular recombination via tail states and surface recombination is identified as a loss mechanism that competes with recombination via dangling bonds. The post-transit behaviour of electron-TOF is dominated by holes emitted from the valence band (vb) -tail. The density of states distribution from post-transit-spectroscopy (PTS) shows features of the vb-tail. Finally, hole SCLC-TOF shows a different behaviour from electron SCLC-TOF.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 497
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kočka, J., in Electronic and optoelectronic materials for the 21st century, Ed. Marshall, J.M. et al. (World Scientific, Singapore, 1993), p. 129.Google Scholar
2. Brummack, H., Bernhard, N., Eberhardt, K., Schubert, M., MRS Symposium Proceedings (MRS, Pittsburgh, 1994) 336 ed. Schiff, E.A. et al. p. 437.Google Scholar
3. Many, A., Rakavy, G., Phys. Rev. 126, 1980 (1962).Google Scholar
4. Juška, G. et al., Phil. Mag. B 69, 277 (1994).Google Scholar
5. Brüggemann, R., Main, C. und Bauer, G. H., MRS Symposium Proceedings (MRS, Pittsburgh, 1992) 258 Ed. Thompson, M.J. et al. p. 729.Google Scholar
6. Main, C. und Brüggemann, R., as [1], p. 270.Google Scholar
7. Hughes, R.C., Sokel, R.J., J. Appl. Phys. 52, 6743 (1981).Google Scholar
8. Brüggemann, R., in Electronic, Optoelectronic and Magentic Thin Films, ed. Marshall, J.M. et al. (Res. Studies Press, Taunton, 1995), p. 51.Google Scholar
9. Spear, W. E., Phil. Mag. B 1, 197 (1969).Google Scholar
10. Hecht, K., Z. Phys. 77, 16 (1932).Google Scholar
11. Šipek, E. et al., in Proc. of 12th European Photovolaic Solar Energy Conference, Ed. Hill, R. et al. (H.S. Stephens & Associates, Bedford, 1994), p. 104.Google Scholar
12. Schauer, F., Eliat, A., Nesladek, M., Adriaenssens, G. J., Appl. Phys. Lett. 64, 3009 (1994).Google Scholar
13. Seynhaeve, G. F. et al., Phys. Rev. B 39, 10196 (1989).Google Scholar
14. Brüggemann, R., Bauer, G. H., to be published.Google Scholar