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Numerical Modeling of Radiative Properties of Patterned Wafers with Sub-Micron Features

Published online by Cambridge University Press:  10 February 2011

Jeffrey B. Hoppert ,
Ioannis N. Miaoulis  and
Peter Y. Wong
Jeffrey B. Hoppert
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department Tufts University, Medford, MA 02155
Ioannis N. Miaoulis
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department Tufts University, Medford, MA 02155
Peter Y. Wong
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department Tufts University, Medford, MA 02155
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Abstract

Decreasing feature sizes in the microelectronics industry have led to numerous processing problems with thin film semiconductors. Non-uniform temperature distributions, due to microscale radiation effects on the radiative properties of the thin film structures, are responsible for wafer defects. These microscale radiation effects become significant as pattern spacing and film thicknesses reach the same order of magnitude as the wavelengths of the heat-source radiation. A numerical model has been developed in which normal emissivities for patterned wafers are calculated, using an effective index of refraction technique. In this study various patterns at temperatures critical to the thermal processing are examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 51
Copyright
Copyright © Materials Research Society 1996

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