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A Numerical Model for Hot-Wire Chemical Vapor Deposition of Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

D. G. Goodwin
D. G. Goodwin*
Affiliation:
Division of Engineering and Applied Science, California Institute of Technology, Pasadena, CA 91125, [email protected]
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Abstract

A Direct Simulation Monte Carlo numerical model for hot-wire CVD is described that includes detailed gas-phase chemistry and accurately models gas-phase transport, from the low-pressure ballistic regime to the high-pressure diffusive regime. Model predictions for an idealized reactor geometry are shown to agree qualitatively with experimental trends.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 79
Copyright
Copyright © Materials Research Society 1999

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