Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-17T14:09:56.484Z Has data issue: false hasContentIssue false
  • English
  • Français

A Numerical Model for Hot-Wire Chemical Vapor Deposition of Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

D. G. Goodwin
D. G. Goodwin*
Affiliation:
Division of Engineering and Applied Science, California Institute of Technology, Pasadena, CA 91125, [email protected]
Get access

Abstract

A Direct Simulation Monte Carlo numerical model for hot-wire CVD is described that includes detailed gas-phase chemistry and accurately models gas-phase transport, from the low-pressure ballistic regime to the high-pressure diffusive regime. Model predictions for an idealized reactor geometry are shown to agree qualitatively with experimental trends.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 79
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Molenbroek, E. C., Mahan, A. H., Johnson, E. J., and Gallagher, A. C., J. Appl. Phys. 79, 7278 (1996).Google Scholar
2. Tsuji, N., Akiyama, T., and Komiyama, H., J. Non-Cryst. Solids 198–200, 1054 (1996).Google Scholar
3. Molenbroek, E. C., Mahan, A. H., and Gallagher, Alan, J. Appl. Phys. 82, 1909 (1997).Google Scholar
4. Bird, G. A., Molecular Gas Dynamics and the Direct Simulation of Gas Flows (Oxford University Press, New York, 1994).Google Scholar
5. Doyle, J., Robertson, R., Lin, G. H., He, M. Z., and Gallagher, A., J. Appl. Phys. 64, 3215 (1988).Google Scholar
6. Perrin, J., Shiratani, M., Kae-Nune, P, Videlot, H., Jolly, J., and Guillon, J., J. Vac. Sci. Technol. A 16, 278 (1998).Google Scholar
7. Ho, P., Coltrin, M.E., and Breiland, W.G., J. Phys. Chem. 98, 10138 (1994).Google Scholar
8. Woiki, D., Catoire, L., and Roth, P., AIChE Journal 43, 2670 (1997).Google Scholar
9. Dickinson, A.P., O'Neil, H.E., and Ring, M.A., Organometallics 10, 3513 (1991).Google Scholar
10. Becerra, R. and Walsh, R., J. Phys. Chem. 96, 10856 (1992).Google Scholar
11. Colegrove, B. T. and Schaefer, H. F. III, J. Phys. Chem. 94, 5593 (1990).Google Scholar