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Nucleation-Based Control of Low-Temperature Diamond Film Deposition on Optical Substrates

Published online by Cambridge University Press:  10 February 2011

Donald R. Gilbert
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Melanie L. Carasso
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Paul A. Demkowicz
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Rajiv K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
James H. Adair
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
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Abstract

Microstructural control is a critical issue in the use of diamond films in a variety of engineering applications. Using a novel, electrostatic-based particle seeding process, we have investigated the deposition of diamond films with varying areal nucleation densities. Depositions were performed at 1.000 Torr in a modified electron cyclotron resonance plasma system. Methyl alcohol was the primary diamond precursor species. SEM and Raman spectroscopy were used to evaluate microstructure and composition characteristics. Comparisons in deposition characteristics were made based on relative nucleation density.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Ramesham, R. and Roppel, T., J. Mater. Res. 5, 1144 (1992)Google Scholar
2. Fayette, L., Mermoux, M., and Marcus, B., Diam. Rel. Mater. 3, 480 (1994)Google Scholar
3. Yang, G. S., Aslam, M., Kuo, K. P., Reinhard, D. K., and Asmussen, J., J. Vac. Sci. Technol. B 13, 1030(1995)Google Scholar
4. Makita, H., Nishimura, K., Jiang, N., Hatta, A., Ito, T., and Hiraki, A., Thin Solid films 281–282, 279(1996)Google Scholar
5. Singh, R. K., Gilbert, D., Tellshow, R., Holloway, P. H., Ochoa, R., Simmons, J. H. and Koba, R., Appl. Phys. Lett. 61, 2863 (1992)Google Scholar
6. Shroder, R. E., Nemanich, R. J., and Glass, J. T., Phys. Rev. B 41, 3738 (1990)Google Scholar
7. Windischmann, H. and Epps, G. F., J. Appl. Phys. 69, 2231 (1991)Google Scholar
8. Muranaka, Y., Tamashita, H., and Miyadera, H., J. Vac. Sci. Technol. A 9, 76 (1991)Google Scholar