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A Nucleation Study of GaN Multifunctional Nanostructures

Published online by Cambridge University Press:  01 February 2011

Gupta Shalini ,
Kang Hun ,
Strassburg Martin ,
Asghar Ali ,
Senawiratne Jayantha ,
Dietz Nikolaus  and
Ferguson Ian T.
Gupta Shalini
Affiliation:
Georgia Institute of Technology, Electrical and Computer Engineering, Atlanta, GA 30332, U.S.A.
Kang Hun
Affiliation:
Georgia Institute of Technology, Electrical and Computer Engineering, Atlanta, GA 30332, U.S.A.
Strassburg Martin
Affiliation:
Georgia Institute of Technology, Electrical and Computer Engineering, Atlanta, GA 30332, U.S.A. Georgia State University, Department of Physics and Astronomy, Atlanta, GA 30303, U.S.A.
Asghar Ali
Affiliation:
Georgia Institute of Technology, Electrical and Computer Engineering, Atlanta, GA 30332, U.S.A.
Senawiratne Jayantha
Affiliation:
Georgia State University, Department of Physics and Astronomy, Atlanta, GA 30303, U.S.A.
Dietz Nikolaus
Affiliation:
Georgia State University, Department of Physics and Astronomy, Atlanta, GA 30303, U.S.A.
Ferguson Ian T.*
Affiliation:
Georgia Institute of Technology, Electrical and Computer Engineering, Atlanta, GA 30332, U.S.A. Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, GA 30332, U.S.A.
*
* Corresponding author: [email protected]
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Abstract

This paper reports the Metal Organic Chemical Vapor Deposition (MOCVD) growth of GaN nanostructures. The use of MOCVD allows the direct integration of these nanostructures into pre-existing device technology. The formation of GaN nanostructures grown on AlN epitaxial layers were studied as a function of growth temperature, growth rate, V-III ratio and the amount of deposited material. A wide range of temperatures from 800 °C to 1100 °C and V-III ratios from 30 to 3500 were applied to determine the optimal growth conditions for nucleation studies in a modified production reactor. Small GaN nanostructures with lateral dimensions below 50 nm and low aspect ratios were obtained using relatively low temperatures of 815 °C and extreme metal-rich growth conditions. Island densities up to 1010 cm−2 were achieved using silane as an anti-surfactant to increase the available nucleation sites. Manganese has been incorporated into these nanostructures to enhance the multifunctional ferromagnetic properties of GaMnN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E12.7
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. GiL, B. (editor), “Group III Nitride Semiconductor Compounds”, Oxford University Press, (1998).Google Scholar
2. Dietl, T., Ohno, H., Matsukura, F., Cibert, J., and Ferrand, D., Science 287, pp. 1019–1022 (2000).Google Scholar
3. Bimberg, D., Grundmann, M. and Ledentsov, N. N. (editor), “Quantum Dot Heterostructures”, John Wiley & Sons, pp. 338 (1999).Google Scholar
4. Steiner, T. D. (editor), “Semiconductor Nanostructures for Optoelectronic Applications”, Artech House, (2004).Google Scholar
5. Daruka, I., Barabasi, A.-L., Phys. Rev. Lett. 79, 3708 (1997).Google Scholar
6. Gogneau, N., Jalabert, D., and Monroy, E., Shibata, T. and Tanaka, M., Daudin, B., J. Appl. Phys. 94, 2254 (2003).Google Scholar
7. Brown, J., Wu, F., Petroff, P.M., Speck, J.S., Applied Physics Letters 84, 690 (2004).Google Scholar
8. Miyamura, M., Tachibana, K., and Arakawa, Y.,, Appl. Phys. Lett. 80, 3937 (2002).Google Scholar
9. Yang, T., Uchida, K., Mishima, T., Kasai, J., and Gotoh, J., phys. Stat. Sol (a) 180, 45 (2000).Google Scholar
10. Rosa, A. L., Neugebauer, J., Lee, Chae-Deok and Feenstra, R. M., Appl. Phys. Lett. 80, 2008 (2002).Google Scholar
11. Krestnikov, I.L., Ledentsov, N.N., Hoffmann, A., Bimberg, D., Phys. Stat. Sol. A, 183, 207 (2001).Google Scholar
12. Tanaka, S., Suemune, I., Ramvall, P., Aoyagi, Y., Phys. Stat. Sol. B 216, 431 (1999).Google Scholar