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Nucleation Studies of Lattice Matched and Mis-Matched Heteroepitaxial Layers Using the GaAs/AlxGa1−xP/Si System.

Published online by Cambridge University Press:  25 February 2011

Thomas George ,
E. R. Weber ,
A.T. Wu ,
S. Nozaki ,
N. Noto  and
M. Umeno
Thomas George
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
E. R. Weber
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
A.T. Wu
Affiliation:
Intel Corporation, Santa Clara, CA
S. Nozaki
Affiliation:
Intel Corporation, Santa Clara, CA
N. Noto
Affiliation:
Nagoya Institute of Technology, Nagoya, Japan
M. Umeno
Affiliation:
Nagoya Institute of Technology, Nagoya, Japan
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Abstract

Heteroepitaxial growth of GaAs on Silicon substrates is being actively pursued, since this technology offers numerous potential benefits in terms of optoelectronic and high speed devices. However a complete understanding of the fundamental causes for film properties such as surface morphology and crystal quality is still lacking at the present time. We present here the results of a study of GaAs grown on Silicon substrates using AlxGa1−xP intermediate layers. This system offers the advantage of studying the effects of surface properties and bulk properties of heteroepitaxial films separately. Surface and interface properties are shown to be the dominant factors in the growth of AlxGa1−xP on Si, where the lattice match between the two materials is very good. For low Al mole fractions the layers tend to form islands indicative of 3D growth, whereas for x>0.4, the layers are planar indicative of 2D growth. Bulk properties such as the lattice constant mismatch are presumed to play a key role in the growth of GaAs on AlxGa1−xP intermediate layers, where it is shown that the GaAs still has an island type nucleation phase, even though surface and interface factors such as contamination and polar-on-nonpolar growth are avoided. In addition the nucleation of the GaAs on the AlxGa1−xP intermediate layers appears to be modified by the nature of the AlxGa1−xP layer i.e. whether the intermediate layer is in the form of islands or a planar layer. The final surface morphology and the crystalline quality of 3gtm GaAs films grown on AlxGa1−xP intermediate layers can be correlated to the initial nucleation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 253
Copyright
Copyright © Materials Research Society 1989

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References

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