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Nucleation Processes in Si CVD on Ultrathin SiO2 Layers

Published online by Cambridge University Press:  09 August 2011

T. Yasuda ,
D. S. Hwang ,
K. Ikuta ,
S. Yamasaki  and
K. Tanaka
T. Yasuda
Affiliation:
Joint Research Center for Atom Technology (JRCAT)-National Institute for Advanced Interdisciplinary Research (NAIR), Tsukuba, 305-8562, Japan, [email protected]
D. S. Hwang
Affiliation:
Joint Research Center for Atom Technology (JRCAT)-Angstrom Technology Partnership (ATP), Tsukuba, 305-0046, Japan
K. Ikuta
Affiliation:
Joint Research Center for Atom Technology (JRCAT)-National Institute for Advanced Interdisciplinary Research (NAIR), Tsukuba, 305-8562, Japan, [email protected]
S. Yamasaki
Affiliation:
Joint Research Center for Atom Technology (JRCAT)-National Institute for Advanced Interdisciplinary Research (NAIR), Tsukuba, 305-8562, Japan, [email protected]
K. Tanaka
Affiliation:
Joint Research Center for Atom Technology (JRCAT)-National Institute for Advanced Interdisciplinary Research (NAIR), Tsukuba, 305-8562, Japan, [email protected]
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Abstract

We investigate nucleation densities in UHV-CVD of Si on ultrathin SiO2 layers (0.2-2 nm) which were prepared by three different oxidation methods: thermal, UV-ozone, and plasma oxidation. The experiments changing the Si2H6 pressure in UHV-CVD indicate that these oxide surfaces have preferred sites for nucleation. Among the three oxidation methods, the nucleation density, Ns, on the thermal oxide is the lowest, while the plasma oxide shows the highest Ns. These results suggest that strained bonds and ion-induced damages in the oxide layers assist nucleation. For UV-ozone and plasma oxides Ns is independent of orientation, reconstruction, and morphology of the initial Si surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 439
Copyright
Copyright © Materials Research Society 1999

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