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Nucleation Process During Excimer Laser Annealing of Amorphous Silicon Thin Films on Glass: A Molecular-dynamics Study

Published online by Cambridge University Press:  01 February 2011

Shinji Munetoh ,
Takanori Mitani ,
Takahide Kuranaga  and
Teruaki Motooka
Shinji Munetoh
Affiliation:
[email protected], Kyushu University, Materials Science and Engineering, 744 Motooka, Fukuoka, 819-0395, Japan, +81(0)92-802-2966, +81(0)92-802-2966
Takanori Mitani
Affiliation:
[email protected], Kyushu University, Materials Science and Engineering, 744 Motooka, Fukuoka, 819-0395, Japan, +81(0)92-802-2966, +81(0)92-802-2966
Takahide Kuranaga
Affiliation:
[email protected], Kyushu University, Department of Materials Science and Engineering, 744 Motooka, Fukuoka, 819-0395, Japan
Teruaki Motooka
Affiliation:
[email protected], Kyushu University, Department of Materials Science and Engineering, 744 Motooka, Fukuoka, 819-0395, Japan
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Abstract

We have performed molecular-dynamics simulations of heating, melting and recrystallization processes in amorphous silicon (a-Si) thin films deposited on glass during excimer laser annealing. By partially heating the a-Si surface region with 2 nm depth and removing thermal energy from the bottom of the glass substrate, a steady-state temperature profile was obtained in the a-Si layer with the thickness of 15 nm and only the surface region was melted. It was found that nucleation predominantly occurred in the a-Si region as judged by the coordination numbers and diffusion constants of atoms in the region. The results suggest that nucleation occurs in unmelted residual a-Si region during the laser irradiation and then crystal growth proceeds toward liquid Si region under the near-complete melting condition.

Keywords

laser annealingnucleation & growthsimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 958: Symposium L – Group IV Semiconductor Nanostructures—2006 , 2006 , 0958-L07-07
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Im, J. S., Kim, H. J. and Thompson, M. O.: Appl. Phys. Lett. 63, 1969 (1993).Google Scholar
2. Hatano, M., Moon, S., Lee, M., Suzuki, K. and Grigoropoulos, C. P.: J. Appl. Phys. 87, 36 (2000).10.1063/1.371823Google Scholar
3. Motooka, T. and Munetoh, S.: Phys. Rev. B 69, 73307 (2004).10.1103/PhysRevB.69.073307Google Scholar
4. Munetoh, S., Kuranaga, T., Lee, B. M., Motooka, T., Endo, T. and Warabisako, T.: Dig. Tech. Papers AM-LCD'05, 295 (2005).Google Scholar
5. Ishimaru, M., Munetoh, S. and Motooka, T.: Phys. Rev. B 56, 15133 (1997).Google Scholar
6. Tersoff, J.: Phys. Rev. B 38, 9902 (1988).10.1103/PhysRevB.38.9902Google Scholar
7. Tersoff, J.: Phys. Rev. B 39, 5566 (1989).Google Scholar
8. Motooka, T., Nisihira, K., Munetoh, S., Moriguchi, K. and Shintani, A.: Phys. Rev. B 61, 8537 (2000).Google Scholar
9. van Gunsteren, W. F. and Berendsen, H. J. C.: Mol. Phys. 45, 637 (1982).Google Scholar
10. Morishita, T.: Phys. Rev. E 72, 021201 (2005).10.1103/PhysRevE.72.021201Google Scholar