Published online by Cambridge University Press: 26 February 2011
Real-time measurements of the molten layer thickness and simultaneous measurements of the melt duration at the surface reveal that melt nucleates internally when Si implanted with low solid-solubility impurities such as In is melted with a 30 nsec laser pulse at 694 nm. Internal nucleation of melt was observed for all energy densities examined. Furthermore, at energy densities insufficient to melt the entire amorphous layer, internal nucleation of melt is followed by an explosive-like process in which a buried molten layer propagates toward the irradiated surface.