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Nucleation of Internal Melt During Pulsed Laser Irradiation

Published online by Cambridge University Press:  26 February 2011

P. S. Peercy
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185
Michael O. Thompson
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185
J. Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ, 07974
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Abstract

Real-time measurements of the molten layer thickness and simultaneous measurements of the melt duration at the surface reveal that melt nucleates internally when Si implanted with low solid-solubility impurities such as In is melted with a 30 nsec laser pulse at 694 nm. Internal nucleation of melt was observed for all energy densities examined. Furthermore, at energy densities insufficient to melt the entire amorphous layer, internal nucleation of melt is followed by an explosive-like process in which a buried molten layer propagates toward the irradiated surface.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1.See, e.g., Poate, J. M. and Mayer, J. W., in Laser Annealing of Semiconductors (Academic Press, New York, 1982).Google Scholar
2.Michael Thompson, O., Galvin, G. J., Mayer, J. W., Peercy, P. S., Poate, J. M., Jacobson, D. C., Cullis, A. G. and Chew, N. G., Phys. Rev. Lett. 52, 2360 (1984).CrossRefGoogle Scholar
3. Peercy, P. s., Thompson, Michael O. and Tsao, J. Y., Appl. Phys. Lett. 47, 244 (1985).CrossRefGoogle Scholar
4. Peercy, P. S. and Thompson, Michael O., in Energy Beam-Solid Interactions and Transient Thermal Processing 1984 - MRS Proceedings 35, ed. by Biegelsen, D. K., Rozgonyi, G. A. and Shank, C. V., (MRS, Pittsburgh, 1985), p. 53.Google Scholar
5. Galvin, G. J., Thompson, Michael O., Mayer, J. W., Hammond, R. B., Paulter, N. and Peercy, P. S., Phys. Rev. Lett. 48, 33 (1982).CrossRefGoogle Scholar
6. Thompson, Michael O., Galvin, G. J., Mayer, J. W., Peercy, P. S. and Hammond, R. B., Appl. Phys. Lett. 42, 445 (1983).CrossRefGoogle Scholar
7. Auston, D. H., Surko, C. M., Venkatesan, T. N. C., Slusher, R. E. and Golovchenko, J. A., Appl. Phys. Lett. 33, 437 (1978).CrossRefGoogle Scholar
8. Thompson, Michael O., PhD Thesis, Cornell University, 1984.Google Scholar
9. Liquid Semiconductors, ed. by Glazov, V. M., Chizkovskaga, S. N. and Glagoleva, N. N. (Plenum Press, New York, 1969).CrossRefGoogle Scholar
10.See, e.g., White, C. W., Appleton, B. R. and Wilson, S. R. in Ref. 1, Chapter 5.Google Scholar
11. Cullis, A. G., Weber, H. C. and Bailey, P., J. Phys. E12, 688 (1979).Google Scholar
12. Donovan, E. P., Spaepen, F., D. Turnbull,J. Poate, M. and Jacobson, D. C., Appl. Phys. Lett. 42, 698 (1983).CrossRefGoogle Scholar
13. Thompson, Michael O., Mayer, J. W., Cullis, A. G., Webber, H. C., Chew, N. G., Poate, J. M. and Jacobson, D. C., Phys. Rev. Lett. 50, 896 (1983).CrossRefGoogle Scholar
14. Thompson, Michael O., Peercy, P. S., Phys. Rev. B, to be published.Google Scholar
15. Aziz, M. J., Tsao, J. Y., Thompson, Michael O., Peercy, P. S. and White, C. W., Appl. Phys. Lett., to be published.Google Scholar