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The Nucleation of Crystalline TiSi2 Phases from Amorphous TiSix Layers and Interfacial Layers

Published online by Cambridge University Press:  10 February 2011

R. T. Tung ,
K. Fujii ,
K. Kikuta ,
S. Chikaki  and
T. Kikkawa
R. T. Tung
Affiliation:
Lucent Technologies Bell Labs., Murray Hill, N.J. 07974
K. Fujii
Affiliation:
ULSI Device Development Lab., NEC Corp., Sagamihara, Kanagawa JAPAN
K. Kikuta
Affiliation:
ULSI Device Development Lab., NEC Corp., Sagamihara, Kanagawa JAPAN
S. Chikaki
Affiliation:
ULSI Device Development Lab., NEC Corp., Sagamihara, Kanagawa JAPAN
T. Kikkawa
Affiliation:
ULSI Device Development Lab., NEC Corp., Sagamihara, Kanagawa JAPAN
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Abstract

Silicide reaction between co-deposited TiSix layers and Si was studied. It was shown that an amorphous TiSix layer, with x − 0.5–1, deposited between amorphous Si and the Ti film led to a significant reduction in the observed C49→C54 TiSis transformation temperature. Amorphous TiSix layers generated by the pre-deposition of Ti and pre-annealing also enhanced the nucleation of the C54-TiSi2 phase. The efficacy of the interfacial TiSix layer was demonstrated on undoped and heavily doped n- and p-type α-Si, but was found to be absent on single crystal Si. Possible mechanisms of these phenomena are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 267
Copyright
Copyright © Materials Research Society 1997

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