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Nucleation and Growth Dependence of ALD WNC on Substrate SurfaceCondition

Published online by Cambridge University Press:  17 March 2011

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Abstract

ALD WNC nucleation and growth was observed strongly affected by differentsubstrate materials and surface chemistries. Nucleation was inhibited onmost pristine low k surfaces, which is attributed to low concentrations ofchemisorption sites (Si-OH). Plasma treatments were used to alter thesurface chemistry to improve nucleation. Surface closure and surfaceroughness of the WNC layer were found to strongly correlate with startingsurface condition. Resistivities of the resulting films were also founddependent on starting surface treatment. But the relationship between Wcontent of the films, surface treatment and resistivity was not fullycomprehended.

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Articles
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F2.7
Copyright
Copyright © Materials Research Society 2004

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