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Nucleation and Crystallization of Amorphous Silicon-Aluminum Thin Films

Published online by Cambridge University Press:  15 February 2011

F. Lin ,
M. K. Hatalis ,
S. Girginoudi ,
D. Girginoudi ,
N. Georgoulas  and
A. Thanailakis
F. Lin
Affiliation:
Lehigh University, Dept. of Computer Science and Electrical Engineering, Bethlehem, PA 18015.
M. K. Hatalis
Affiliation:
Lehigh University, Dept. of Computer Science and Electrical Engineering, Bethlehem, PA 18015.
S. Girginoudi
Affiliation:
Democritus University of Trace, Dept. of Electrical Engineering, 67100 Xanthi, Greece.
D. Girginoudi
Affiliation:
Democritus University of Trace, Dept. of Electrical Engineering, 67100 Xanthi, Greece.
N. Georgoulas
Affiliation:
Democritus University of Trace, Dept. of Electrical Engineering, 67100 Xanthi, Greece.
A. Thanailakis
Affiliation:
Democritus University of Trace, Dept. of Electrical Engineering, 67100 Xanthi, Greece.
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Abstract

The phase transformation of amorphous silicon-aluminum thin films with 16 at.% and 30 at.% aluminum was characterized by TEM during an in-situ anneal at 500°C. No crystallization was observed in the samples having 16 at.% Al even after a 10 hour anneal at 500°C. In contrast, nucleation of crystallites was observed in the samples having 30 at.% Al after a 40 min anneal. The size of these crystallites grew during annealing. Single crystal regions were also observed and were identified as aluminum having <111> orientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 195
Copyright
Copyright © Materials Research Society 1992

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