Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T17:52:52.006Z Has data issue: false hasContentIssue false
  • English
  • Français

N-rich GaNAs with High As Content Grown by Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  01 February 2011

Akitaka Kimura ,
H. F. Tang ,
C. A. Paulson  and
T. F. Kuech
Akitaka Kimura
Affiliation:
Department of Chemical and Biological Engineering, The University of Wisconsin-Madison, Madison, WI 53706–1691, USA
H. F. Tang
Affiliation:
Department of Chemical and Biological Engineering, The University of Wisconsin-Madison, Madison, WI 53706–1691, USA
C. A. Paulson
Affiliation:
Department of Electrical and Computer Engineering, The University of Wisconsin-Madison, Madison, WI 53706–1691, USA
T. F. Kuech
Affiliation:
Department of Chemical and Biological Engineering, The University of Wisconsin-Madison, Madison, WI 53706–1691, USA
Get access

Abstract

GaN1-yAsy epitaxial alloys on the N-rich side with high As content were grown by metalorganic vapor phase epitaxy. They had specular surfaces and the single-phase epitaxial nature was confirmed by X-ray diffraction. The As incorporation increased through both a decrease in the growth temperature and V/III ratio. These trends were similar to that found in other III-V alloy systems which exhibit a large miscibility gap and the anion incorporation was considered to have been limited kinetically under the conditions of the low V/III ratio. The range of achieved As content was extended up to y=0.067, which is a composition well within the miscibility gap. The As-content dependence of the band gap energy was determined by optical absorption measurements and large bowing parameter of 16.8 ± 0.9 eV was determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y12.10
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Kondow, M., Uomi, K., Niwa, A., and Kitatani, T., Jpn. J. Appl. Phys. 35, 1273 (1996).Google Scholar
[2] Sakai, S., Ueta, Y., and Terauchi, Y., Jpn. J. Appl. Phys. 32, 4413 (1993).Google Scholar
[3] Neugebauer, J. and Van de Walle, C. G., Phys. Rev. B 51, 10568 (1995).Google Scholar
[4] Novikov, S. V., Winser, A. J., Bell, A., Harrison, I, Li, T., Campion, R. P., Staddon, C. R., Davis, C. S., Ponce, F. A., and Foxon, C. T., J. Cryst. Growth 240, 423 (2002).Google Scholar
[5] Gherasimova, M., Gaffey, B., Mitev, P., Guido, L. J., Chang, K. L., Hsieh, K. C., Mitha, S., and Spear, J., MRS Internet J. Nitride Semicond. Res. 4S1, G3.44 (1999).Google Scholar
[6] Iwata, K., Asahi, H., Asami, K., Kuroiwa, R., and Gonda, S., Jpn. J. Appl. Phys. 37, 1436 (1998).Google Scholar
[7] Larsen, C. A., Buchan, N. I., Li, S. H., and Stringfellow, G. B., J. Cryst. Growth 94, 663 (1989).Google Scholar
[8] Ban, V. S., J. Electrochem. Soc. 119, 761 (1972).Google Scholar
[9] Liu, S. S. and Stevenson, D. A., J. Electrochem. Soc. 125, 1161 (1978).Google Scholar
[10] Mesrine, M., Grandjean, N., and Massies, J., Appl. Phys. Lett. 72, 350 (1998).Google Scholar
[11] Cherng, M. J., Stringfellow, G. B. and Cohen, R. M., Appl. Phys. Lett. 44, 677 (1984).Google Scholar
[12] Hishikawa, Y., Nakamura, N., Tsuda, S., Nakano, S., Kishi, Y., and Kuwano, Y., Jpn. J. Appl. Phys. 30, 1008 (1991).Google Scholar