Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T18:04:03.743Z Has data issue: false hasContentIssue false
  • English
  • Français

N+/P and P+/N Junctions in Strained Si on Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer Structure

Published online by Cambridge University Press:  01 February 2011

G. Eneman ,
E. Simoen ,
R. Delhougne ,
P. Verheyen ,
M. Ries ,
R. Loo ,
M. Caymax ,
W. Vandervorst  and
K. De Meyer
G. Eneman
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium K.U. Leuven, ESAT-INSYS, 3001 Leuven, Belgium Research assistant of The Fund for Scientific Research – Flanders (Belgium)
E. Simoen
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium
R. Delhougne
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium
P. Verheyen
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium
M. Ries
Affiliation:
MEMC Electronic Materials, PO Box 8, 501 Pearl Drive, Saint Peters, MO, 63376, USA
R. Loo
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium
M. Caymax
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium
W. Vandervorst
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium K.U. Leuven, ESAT-INSYS, 3001 Leuven, Belgium
K. De Meyer
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium K.U. Leuven, ESAT-INSYS, 3001 Leuven, Belgium
Get access

Abstract

The electrical performance of junctions in SiGe Strain Relaxed Buffers (SRB's) with a strained Si top layer is investigated. Most of the SRB's grown in this experiment use a thin C-doped SiGe layer, which allows to fabricate thin (∼250nm) SRB's with a high relaxation degree. The effects of Threading Dislocation Density (TDD) and C-rich layer depth on the electrical behaviour of n+/p and p+/n junctions are studied. The C atoms in the junction's Space Charge Region (SCR) give rise to defects and induce a noticeable increase in the leakage. The effect of the TDD on the leakage in n+/p junctions is linear over the complete voltage range applied, while for p+/n junctions, only a small effect on leakage is measured at V=1V reverse for TDD's below 1×107cm-2. For low reverse voltages, the current varies more linearly with TDD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E3.7
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Uchida, K. et al., IEDM Tech. Dig., p. 229 (2004)Google Scholar
[2] Lee, M., Fitzgerald, E.A., Bulsara, M.T., Currie, M.T., Lochtefeld, A., J. Appl. Phys 97 (1), p. 11101 (2005)Google Scholar
[3] Delhougne, R., Meunier-Beillard, P., Caymax, M., Loo, R., Vandervorst, W., Proc. of the ISTDM 2003, Applied Surface Science 224, p. 91 (2004)Google Scholar
[4] Delhougne, R., Eneman, G., Caymax, M., Loo, R., Meunier-Beillard, P., Verheyen, P., Vandervorst, W., Meyer, K. De, Heyns, M., Solid State Electronics-Special Issue Strained-Si Heterostructures and Devices 48 (8), p. 1307 (2004)Google Scholar
[5] Loo, R. et al., MRS Symposium Proceedings 809, p. 3 (2004)Google Scholar
[6] Eneman, G. et al., MRS Symposium Proceedings 809, p. 187 (2004)Google Scholar
[7] Eneman, G., Simoen, E., Delhougne, R., Gaubas, E., Simons, V., Roussel, P., Verheyen, P., Lauwers, A., Loo, R., Vandervorst, W., Meyer, K. De, Claeys, C., Accepted for publication in Journal of Physics: Condensed Matter Google Scholar
[8] Brotherton, S., Ayres, J., Clegg, J., Gowers, J., Journal of Electronic Materials 18 (2), p. 173 (1989)Google Scholar