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Novel Zirconium Formamidinate Precursor for the ALD of ZrO2

Published online by Cambridge University Press:  31 January 2011

Huazhi Li ,
Deo V Shenai  and
Jean-Sebastien Lehn
Huazhi Li
Affiliation:
[email protected], Dow Electronic Materials, Metallorganic Technologies, North Andover, Massachusetts, United States
Deo V Shenai
Affiliation:
[email protected], Dow Electronic Materials, Metallorganic Technologies, North Andover, Massachusetts, United States
Jean-Sebastien Lehn
Affiliation:
[email protected], Dow Electronic Materials, Metallorganic Technologies, North Andover, Massachusetts, United States
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Abstract

Zirconium tetrakis(N,N’-dimethylformamidinate), Zr-FAMD, was synthesized and evaluated as a precursor for the deposition of zirconium oxide (zirconia) thin films via Atomic Layer Deposition (ALD) technique. Zr-FAMD has a high vapor pressure and displays an exceptionally high thermal stability; it is thus well-suited to be used as a precursor for the deposition of zirconia thin films. Zr-FAMD is a more ideally-suited precursor than tetrakisethylmethylaminozirconium or TEMAZr, which has an equivalent vapor pressure, but is plagued with a rather low thermal stability, limiting its usefulness at high deposition temperatures. Zr-FAMD can be used to deposit zirconia thin films at temperatures as high as 375 °C without evidence of decomposition.

Keywords

atomic layer depositionZrdielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1194: Symposium A – High-k Dielectrics on Semiconductors with High Carrier Mobility , 2009 , 1194-A05-10
Copyright
Copyright © Materials Research Society 2010

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