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A Novel Technique to Re-construct 3D Void in Passivated Metal Interconnects

Published online by Cambridge University Press:  01 February 2011

Cher Ming Tan ,
Zhenghao Gan ,
Guan Zhang ,
Krishnamachar Prasad  and
Dao Hua Zhang
Cher Ming Tan
Affiliation:
Division of Microelectronics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798
Zhenghao Gan
Affiliation:
Division of Microelectronics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798
Guan Zhang
Affiliation:
Division of Microelectronics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798
Krishnamachar Prasad
Affiliation:
Division of Microelectronics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798
Dao Hua Zhang
Affiliation:
Division of Microelectronics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798
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Abstract

In the present work, a novel method is proposed to re-construct voids in passivated metal interconnections. In this method, the conventional SEM and EBIC systems are assembled and utilized without much modification. In principle, a constant current is applied to the metal interconnections while an electron beam is scanning and impinging upon the surface of the sample. The voltage at the terminals is monitored simultaneously during electron beam scanning. Resistance change, and hence voltage perturbation are expected when the electron beam approaches the defective area, caused by uneven electron beam heating (EBH) and heat transmission. Information on defects or voids is thus obtained by analyzing the voltage alteration. Finite element simulation showed that the recorded voltage perturbation is not dependent of the length of the interconnect, but a linear function of the void volume. Thus, the method is essentially useful as the metal length has increased tremendously in copper technology. In addition, it can provide the void size and depth, with the possibility to reconstruct the entire void shape in 3D.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E4.8
Copyright
Copyright © Materials Research Society 2003

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References

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