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A Novel Technique for Characterization of Amorphous Silicon Thin Films

Published online by Cambridge University Press:  21 February 2011

V. Malhotra  and
M. Weling
V. Malhotra
Affiliation:
Department of Electrical Engineering, University of Hawaii at Manoa, 2540 Dole Street, Honolulu, HI 96822
M. Weling
Affiliation:
Department of Electrical Engineering, University of Hawaii at Manoa, 2540 Dole Street, Honolulu, HI 96822
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Abstract

A novel technique for characterizing the variation of depletion width versus reverse bias voltage, the absorption coefficient, and the defect density in amorphous silicon thin films has been developed. The technique utilizes the fact that the rate of change of dc photocurrent with reverse voltage in a photodiode is strongly dependent upon the wavelength of light.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 261: Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect , 1992 , 155
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Sze, S. M., Physics of semiconductor devices, 2nd edition, (John Wiley and Sons, New York, 1981).Google Scholar
2. Brodsky, M. H., Topics in Applied Physics, Amorphous Semiconductors, vol.36, 2nd edition (Springer-Verlag, New York, 1985), p. 287.Google Scholar