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A Novel Surface Preparation and Post-Etch Removal Technique for InGaAs Sidewalls

Published online by Cambridge University Press:  10 February 2011

S. A. Tabatabaei ,
G. A. Porkolab ,
S. Agarwala ,
F. G. Johnson ,
S. A. Merritt ,
O. King ,
M. Dagenais ,
Y. J. Chen  and
D. R. Stone
S. A. Tabatabaei
Affiliation:
Joint Program for Advanced Electronic: Materials Electrical Engineering Department, University of Maryland and Laboratory for Physical Sciences, College Park, Maryland 20742
G. A. Porkolab
Affiliation:
Joint Program for Advanced Electronic: Materials Electrical Engineering Department, University of Maryland and Laboratory for Physical Sciences, College Park, Maryland 20742
S. Agarwala
Affiliation:
Joint Program for Advanced Electronic: Materials Electrical Engineering Department, University of Maryland and Laboratory for Physical Sciences, College Park, Maryland 20742
F. G. Johnson
Affiliation:
Joint Program for Advanced Electronic: Materials Electrical Engineering Department, University of Maryland and Laboratory for Physical Sciences, College Park, Maryland 20742
S. A. Merritt
Affiliation:
Joint Program for Advanced Electronic: Materials Electrical Engineering Department, University of Maryland and Laboratory for Physical Sciences, College Park, Maryland 20742
O. King
Affiliation:
Joint Program for Advanced Electronic: Materials Electrical Engineering Department, University of Maryland and Laboratory for Physical Sciences, College Park, Maryland 20742
M. Dagenais
Affiliation:
Joint Program for Advanced Electronic: Materials Electrical Engineering Department, University of Maryland and Laboratory for Physical Sciences, College Park, Maryland 20742
Y. J. Chen
Affiliation:
Joint Program for Advanced Electronic: Materials Electrical Engineering Department, University of Maryland and Laboratory for Physical Sciences, College Park, Maryland 20742
D. R. Stone
Affiliation:
Joint Program for Advanced Electronic: Materials Electrical Engineering Department, University of Maryland and Laboratory for Physical Sciences, College Park, Maryland 20742
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Abstract

This paper describes in detail a surface preparation, and post-etch removal technique developed for InGaAs sidewalls. It illustrates the results demonstrating the effect of sidewall post-etch, surface preparation, and surface passivation on the performance of high speed InGaAs detectors. Dark current density for circular diodes with a diameter size varying between 10 and 100 μm was measured at a reverse bias voltage of −5 V. The effectiveness of various surface preparation techniques was studied by measuring the immediate improvement in dark current density, as well as its long-term stability. The benefits of this new technique compared to other techniques we have investigated include improved device characteristics, long-term stability, as well as a much less critical process to achieve optimum surface properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 317
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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