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Novel Stm Probe Assisted Site-Control of Quantum Dots With Nanometer Precision

Published online by Cambridge University Press:  10 February 2011

Hitoshi Nakamura ,
Shigeru Kohmoto ,
Tomonori Ishikawa  and
Kiyoshi Asakawa
Hitoshi Nakamura
Affiliation:
The Femtosecond Technology Research Association (FESTA), 5-5 Tohkodai, Tsukuba, Ibaraki 300-2635, Japan
Shigeru Kohmoto
Affiliation:
The Femtosecond Technology Research Association (FESTA), 5-5 Tohkodai, Tsukuba, Ibaraki 300-2635, Japan
Tomonori Ishikawa
Affiliation:
NEDO Industrial Technology Fellowship Researcher
Kiyoshi Asakawa
Affiliation:
The Femtosecond Technology Research Association (FESTA), 5-5 Tohkodai, Tsukuba, Ibaraki 300-2635, Japan
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Abstract

We propose a novel site-control technique for strained quantum dots (QDs) based on nano-lithography using an STM integrated into a UHV STM/MBE multi-chamber system. A nano-scale deposit was formed on a GaAs surface by applying voltage between the GaAs surface and the tungsten tip of the STM. Since the deposit acted as a nano-mask, the subsequent GaAs growth formed a nano-hole just above the deposit. Subsequent InAs supply produced a QD on the hole site, and no QD was observed in any undesirable regions. We also observed the QD formation processes involved in the technique, based on step-by-step STM observations of the QD formation process. The observation directly revealed an InAs wetting layer formation with 1-ML thickness on the GaAs terraces followed by the QD formation in the Stranski-Krastanow growth mode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 71
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1]Arakawa, Y. and Sakaki, H., Appl. Phys. Lett., 40, 939(1982).Google Scholar
[2]Leonardo, D., Krishnamurthy, M., Reeves, C. M., and Petroff, P., Apple. Phys. Lett., 63, 3203(1993).Google Scholar
[3]Bryant, G. B., Phys. Rev. B 40, 1620, (1989).Google Scholar
[4]Bartlett, M. C., Schmidt, A. K., Evance, J. W. and Hwang, R. Q., Phys. Rev. Lett., 81, 1901, (1998).Google Scholar
[5]Kuramochi, E., Temmyo, J.,Tamamura, T. and Kamada, H., J. Electron. Materials, 28, 5, 445, (1999).Google Scholar
[6]Ishikawa, T., Kohmoto, S. and Asakawa, K., Appl. Phys. Lett., 73, 1712(1998).Google Scholar
[7]Ishida, S., Arakawa, Y., and Wada, K., Appl. Phys. Lett., 72, 800(1998).Google Scholar
[8]Kasu, M., Makimito, T. and Kobayashi, N., Appl. Phys. Lett., 70, 1161(1997).Google Scholar
[9]Kohmoto, S., Nakamura, H., Ishikawa, T. and Asakawa, K., to be published in Appl. Phys. Lett.Google Scholar
[10]Nakamura, H., Kohmoto, S., Ishikawa, T. and Asakawa, K., to be published in Physica E.Google Scholar
[11]Kohmoto, S., Nakamura, H., Ishikawa, T. and Asakawa, K., to be published in J. Electron. Materials.Google Scholar