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A Novel Solid-State Light-Emitting Device Based on Ballistic Electron Excitation

Published online by Cambridge University Press:  17 March 2011

Y. Nakajima ,
A. Kojima  and
N. Koshida
Y. Nakajima
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
A. Kojima
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
N. Koshida
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Abstract

The concept of a novel solid-state light-emitting device is proposed on a basis of our previous report that the nanocrystalline porous silicon (PS) diode with a well-controlled structure operate as an efficient ballistic electron emitter. This device is composed of a semitransparent thin Au film, a fluorescent thin film, a PS layer, and n-type Si substrate. When a positive bias voltage is applied to the Au electrode, visible luminescence is emitted of which band corresponds to that of the deposited fluorescent material. The optoelectronic characteristics suggest that the light emission is based on direct excitation of fluorescent film by ballistic electrons generated in the PS layer. This result indicates another possibility of nanocrystalline silicon for photonic applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F4.2.1
Copyright
Copyright © Materials Research Society 2001

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