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A Novel Single Step Lapping and Chemo-Mechanical Polishing Scheme for Antimonide Based Semiconductors Using 1 µm Agglomerate-Free Alumina Slurry

Published online by Cambridge University Press:  14 March 2011

P.S. Dutta ,
R.J. Gutmann ,
D. Keller  and
L. Sweet
P.S. Dutta
Affiliation:
Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA
R.J. Gutmann
Affiliation:
Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA
D. Keller
Affiliation:
Universal Photonics Inc., Hicksville, NY, USA
L. Sweet
Affiliation:
Baikowski International Corp., Charlotte, NC, USA
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Abstract

A novel approach for a single step lapping and chemical-mechanical polishing of antimonide-based III-V compounds using agglomerate-free alumina slurries is presented. Relatively high removal rates, minimal scratching, and low surface roughness have been obtained. The effects of slurry preparation cycle on the slurry properties and chemomechanical polishing results are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 613: Symposium E – Chemical-Mechanical Polishing 2000 - Fundamentals… , 2000 , E4.1.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

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