Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-17T16:16:36.067Z Has data issue: false hasContentIssue false
  • English
  • Français

Novel Silylethynyl Substituted Pentacenes With High-temperature Thermal Transitions

Published online by Cambridge University Press:  01 February 2011

David Redinger ,
Robert S. Clough ,
James C. Novack ,
Gregg Caldwell ,
Marcia M. Payne  and
John E. Anthony
David Redinger
Affiliation:
[email protected]
Robert S. Clough
Affiliation:
[email protected], 3M, St. Paul, Minnesota, United States
James C. Novack
Affiliation:
[email protected], 3M, St. Paul, Minnesota, United States
Gregg Caldwell
Affiliation:
[email protected], 3M, St. Paul, Minnesota, United States
Marcia M. Payne
Affiliation:
[email protected], Outrider Technologies, LLC, Lexington, Kentucky, United States
John E. Anthony
Affiliation:
[email protected], Outrider Technologies, LLC, Lexington, Kentucky, United States
Get access

Abstract

Modifications to the p-type semiconductor TIPS-Pentacene can result in elimination of the solid-solid thermal transition at 124 °C. This new material has shown mobility higher than 1 cm2/Vs. Elimination of the solid-solid thermal transition leaves the melting point as the lowest temperature transition at 199 °C.

Keywords

organicsemiconductingthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1270: Symposia GG/HH/II – Organic Photovoltaics and Related Electronics-From Excitons to Devices , 2010 , 1270-II09-16
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Anthony, J., Brooks, J., Eaton, D., and Parkin, S., J. Am. Chem. Soc. 123, 94829483 (2001).Google Scholar
2 Sirringhaus, H., Kawase, T., Friend, R.H., Shimoda, T., Inbasekaran, M., Wu, W., and Woo, E.P., Science 290, 2123–2126 (2000).Google Scholar
3 Park, S.K., Jackson, T.N., Anthony, J.E., and Mourey, D.A., Applied Physics Letters 91, 063514 (2007).Google Scholar
4 Halls, J., Newsome, C., Kugler, T., Whiting, G., Murphy, C., Burroughes, J., OTFT development for OLED backplanes: optimisation of high mobility 10 m channel OTFTs, Presented at Intertech Thin-Film Transistors Conference (2008).Google Scholar
5 Chen, J., Anthony, J., and Martin, D., J. Phys. Chem. B 110, 1639716403 (2006).Google Scholar
6 Chen, J., Tee, C. K., Yang, J., Shaw, C., Shtein, M., Anthony, J. and Martin, D., J. Polym. Sci. B: Polym. Phys. 44, 36313641 (2006).Google Scholar