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Novel Sensor Applications of group-III nitrides

Published online by Cambridge University Press:  21 March 2011

M. Eickhoff ,
O. Ambacher ,
G. Steinhoff ,
J. Schalwig ,
R. Neuberger ,
T. Palacios ,
E. Monroy ,
F. Calle ,
G. Müller  and
M. Stutzmann
M. Eickhoff
Affiliation:
Walter Schottky Institute, Technical University Munich, Am Coulombwall, D-85748 Garching, Germany
O. Ambacher
Affiliation:
Walter Schottky Institute, Technical University Munich, Am Coulombwall, D-85748 Garching, Germany
G. Steinhoff
Affiliation:
Walter Schottky Institute, Technical University Munich, Am Coulombwall, D-85748 Garching, Germany
J. Schalwig
Affiliation:
EADS Deutschland AG, IRT/LG-MX, P.O. Box 800465, D-81663 Munich, Germany
R. Neuberger
Affiliation:
EADS Deutschland AG, IRT/LG-MX, P.O. Box 800465, D-81663 Munich, Germany
T. Palacios
Affiliation:
ISOM and Dpto. de Ingeneria Electronica, ETSI Telecomunicación, Univ. Politécnica de Madrid, 28040 Madrid, Spain
E. Monroy
Affiliation:
ISOM and Dpto. de Ingeneria Electronica, ETSI Telecomunicación, Univ. Politécnica de Madrid, 28040 Madrid, Spain
F. Calle
Affiliation:
Walter Schottky Institute, Technical University Munich, Am Coulombwall, D-85748 Garching, Germany
G. Müller
Affiliation:
EADS Deutschland AG, IRT/LG-MX, P.O. Box 800465, D-81663 Munich, Germany
M. Stutzmann
Affiliation:
Walter Schottky Institute, Technical University Munich, Am Coulombwall, D-85748 Garching, Germany
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Abstract

The present paper gives an overview over different sensor applications of GaN thin films and AlGaN/GaN heterostructures. The response of Pt-GaN Schottky diodes towards hydrogen and hydrogen containing gases is analysed and their gas sensitivity is characterized from room temperature up to 600°C. In addition, the sheet carrier density of a two dimensional electron gas confined at the heterointerface in AlGaN/GaN high electron mobility transistors (HEMTs) is shown to be significantly influenced by changes in the electronic properties of the device surface. This effect is successfully exploited for the realization of ion detectors and sensors for fluid monitoring based on AlGaN/GaN HEMTs with non-metalized gate areas. Promising possibilities of fabricating monolithically integrated sensor devices for wireless signal transmission are demonstrated by the realization of SAW devices on epitaxial AlN-films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I12.1.1
Copyright
Copyright © Materials Research Society 2002

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