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Novel Room-temperature Ferromagnetic Semiconductors Pb1-x-yCaxCryTe

Published online by Cambridge University Press:  31 January 2011

Evgeny P. Skipetrov ,
Elena A. Zvereva ,
Nikolay A. Pichugin ,
Alexey E. Primenko ,
Evgeny I. Slyn'ko  and
Vasily E. Slyn'ko
Evgeny P. Skipetrov
Affiliation:
[email protected], Moscow State University, Faculty of Physics, Moscow, Russian Federation
Elena A. Zvereva
Affiliation:
[email protected], Moscow State University, Faculty of Physics, Leninskie Gory, 1, Moscow, 119992, Russian Federation
Nikolay A. Pichugin
Affiliation:
[email protected], Moscow State University, Faculty of Phyisics, Moscow, Russian Federation
Alexey E. Primenko
Affiliation:
[email protected], Moscow State University, Faculty of Physics, Moscow, Russian Federation
Evgeny I. Slyn'ko
Affiliation:
[email protected], Institute of Material Science Problems, Chernovtsy, Ukraine
Vasily E. Slyn'ko
Affiliation:
[email protected], Institute of Material Science Problems, Chernovtsy, Ukraine
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Abstract

The galvanomagnetic and magnetic properties of novel diluted magnetic semiconductors Pb1-x-yCaxCryTe (x=0.06-0.20, y=0.003-0.045) have been investigated. Temperature dependencies of the resistivity and the Hall coefficient have a metallic character indicating the pinning of Fermi level by the chromium impurity level on the background of the conduction band states. Magnetization curves display a clear hysteresis loop over the whole temperature range investigated. The Curie temperature, determined from the temperature dependencies of magnetization, achieves 345 K. Possible mechanisms of ferromagnetic ordering were discussed.

Keywords

ferromagneticmagnetic propertieselectronic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1183: Symposium FF – Novel Materials and Devices for Spintronics , 2009 , 1183-FF06-04
Copyright
Copyright © Materials Research Society 2009

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References

1 Dietl, T., Ohno, H., Mater. Today, 9, 18 (2006).Google Scholar
2 Kuroda, S., Nishizawa, N., Takita, K., Mitome, M., Bando, Y., Osuch, K., Dietl, T., Nature Mater,. 6, 440 (2007).Google Scholar
3 Dietl, T., J. Appl. Phys. 103, 07D111 (2008).Google Scholar
4 Wang, K., Edmonds, K., Champion, R., Gallagher, B., Foxon, T., Sawicki, M., Dietl, T., Boguslawski, P., and Jungwirth, T., Proceedings of the 27th International Conference on Physics of Semiconductors, edited by Mendez, J., (AIP, Melville, 2005), p.333.Google Scholar
5 Dietl, T., Ohno, H., Matsukara, F., Cilbert, J., and Ferrand, D., Science, 287, 1019 (2000).Google Scholar
6 Dietl, T., Ohno, H., and Matsukara, F., Phys. Rev. B, 63, 195205 (2001).Google Scholar
7 Park, S.E., Lee, H.-J., Cho, Y.C., Jeong, S-Y., Cho, C.R., Cho, S., Appl. Phys. Lett,. 80, 4187 (2002).Google Scholar
8 Saito, H., Zayets, V., Yamagata, S., Ando, K., Phys. Rev. Lett,. 90, 207202 (2003).Google Scholar
9 Ko, K.Y., Blamire, M.G., Appl.Phys. Lett,. 88, 172101 (2006).Google Scholar
10 Skipetrov, E.P., Mikheev, M.G., Pakpour, F.A., Skipetrova, L.A., Pichugin, N.A., Slyn’ko, E.I., and Slyn’ko, V.E., Semiconductors, 43, 297 (2009).Google Scholar
11 Dornhaus, R., Nimtz, G. and Schlicht, B., Narrow-Gap Semiconductors (Springer-Verlag, Berlin, 1983).Google Scholar
12 Partin, D.L., IEEE J. Quantum Electronics, 24, 1716 (1988).Google Scholar
13 Ishida, A., Tsuchiya, T., Yoshioka, N., Ishino, K., and Fujiyasu, H., Jpn. J. Appl. Phys,. 38, 4652 (1999).Google Scholar
14 Slyn’ko, V.E., Visnyk Lviv Univ., Ser. Physic. 34, 291 (2001).Google Scholar
15 Vulchev, V.D., Borisova, L.D., and Dimitrova, S.K., phys. stat. sol. (a), 97, K79 (1986).Google Scholar
16 Vulchev, V.D., and Borisova, L.D., phys. stat. sol. (a), 99, K53 (1987).Google Scholar
17 Ohsawa, A., Yamaguchi, Y., Kazama, N., Yamauchi, H., and Watanabe, H., J. Phys. Soc. Jap,. 33, 1303 (1972).Google Scholar
18 Yamaguchi, M., Hashimoto, T., J. Phys. Soc. Jap,. 32, 635 (1972).Google Scholar
19 Lukoschus, K., Krashinski, S., Nather, C., Bensch, W., and Kremer, R.K., J. Sol. St. Chem,. 177, 951 (2004).Google Scholar
20 Blinowski, J., Kacman, P. and Majewski, J.A., Phys. Rev. B53, 9524 (1996).Google Scholar
21 Dugaev, V.K., Litvinov, V.I., Barnas, J., Slobodskyy, A.H., Dobrowolski, W. and Vieira, M., J. Supercond.: Incorporated Novel Magnetism 16, 67 (2003).Google Scholar