Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T15:41:15.284Z Has data issue: false hasContentIssue false
  • English
  • Français

Novel Pure Organic Particles for Copper CMP at Low Down Force

Published online by Cambridge University Press:  15 March 2011

K. Cheemalapati ,
A. Chowdhury ,
V. Duvvuru ,
Yong Lin ,
Kwok Tang ,
Guomin Bian ,
Lily Yao  and
Yuzhuo Li
K. Cheemalapati
Affiliation:
Center for Advanced Materials Processing, Clarkson University, Potsdam, NY 13699
A. Chowdhury
Affiliation:
Center for Advanced Materials Processing, Clarkson University, Potsdam, NY 13699
V. Duvvuru
Affiliation:
Center for Advanced Materials Processing, Clarkson University, Potsdam, NY 13699
Yong Lin
Affiliation:
Center for Advanced Materials Processing, Clarkson University, Potsdam, NY 13699
Kwok Tang
Affiliation:
Dynea, Mississauga, Ontario L5R 1B8, Canada
Guomin Bian
Affiliation:
Dynea, Mississauga, Ontario L5R 1B8, Canada
Lily Yao
Affiliation:
Strasbaugh, San Luis Obispo, CA 93401
Yuzhuo Li
Affiliation:
Center for Advanced Materials Processing, Clarkson University, Potsdam, NY 13699
Get access

Abstract

It is generally accepted that there is a minimum hardness requirement for abrasive particles to be used in CMP (Chemical Mechanical Polishing) slurries. For copper CMP, the common abrasives are various types of alumina and silica. It has also long been suspected that a softer organic based abrasive could significant reduce the defects during polishing. In this study, for the first time, we demonstrated the usefulness of an organic particle as abrasive in formulating copper CMP slurry. The unexpected consequence of using such soft hydrophilic particles is its low sensitivity of material removal rate for copper towards polishing down force and platen speed. In addition, due to its unique particle surface properties, the slurry gives high selectivity in removal rate for copper over barrier, cap, and dielectric materials. In this paper, some basic physical and chemical characteristics of the particles and slurry will be first presented. The performance of this new slurry in relation to conventional slurries on blanket and patterned wafers will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 816: Symposium K – Advances in Chemical-Mechanical Polishing , 2004 , K1.7
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kawahashi, Nobuo; Hattori, Masayuki, Materials Research Society Symposium Proceedings 671, no. Chemical-Mechanical Polishing 2001--Advances and Future Challenges (2001): M2.2/1-M2.2/8Google Scholar
2. Teo, Tai Yong; Goh, Wang Ling; Leong, Lup San; Lim, Victor S. K.; Tse, Tak Yan; Chan, Lap, Proceedings of SPIE-The International Society for Optical Engineering 5041, no. Process and Materials Characterization and Diagnostics in IC Manufacturing (2003): 61–69 Google Scholar
3. Haba, Shinichi; Fukuda, Keiji; Ohta, Yoshiharu; Koubuchi, Yasushi; Katouda, Takashi, Japanese Journal of Applied Physics, Part 1: Regular Papers, Short Notes & Review Papers 42, no. 2A (2003): 418–428.Google Scholar
4. Keleher, J., Rushing, K., Zhao, J., Wojtczak, B., and Li, Y. Supramolecular Abrasive Free System for Cu CMP, Proceeding of the Materials Research Society----Volume 767, F6.1.1–6.1.11 (2003).Google Scholar
5. Li, Y., Shi, X., Keleher, J., “Chemical and Mechanical Balance for Defectivity Reduction in Copper CMP,” MRS Spring 2002 Meeting, San Francisco, CA, April 1-5, 2002.Google Scholar
6. Odeh, F., America, W., Dhane, S., and Li, Y., Langmuir, submitted 2004 Google Scholar
7. Solozhenko, V. L.; Petrusha, I. A.; Engler, O.; Bingert, J. F; Journal of Materials Science 36, no. 11 (2001): 2659–2665.Google Scholar