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Novel Process for Ceramic Epitaxy Using Laser Mbe

Published online by Cambridge University Press:  26 February 2011

Mamoru Yoshimoto ,
Hirotoshi Nagata ,
Tadashi Tsukahara ,
Satoshi Gonda  and
Hideomi Koinuma
Mamoru Yoshimoto
Affiliation:
The Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta-cho 4259, Midori-ku, Yokohama, Kanagawa 227, Japan
Hirotoshi Nagata
Affiliation:
on leave from Central Research Laboratory, Sumitomo Cement Co.Ltd., Toyotomi-cho 585, Funabashi, Chiba 274, Japan
Tadashi Tsukahara
Affiliation:
The Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta-cho 4259, Midori-ku, Yokohama, Kanagawa 227, Japan
Satoshi Gonda
Affiliation:
The Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta-cho 4259, Midori-ku, Yokohama, Kanagawa 227, Japan
Hideomi Koinuma
Affiliation:
The Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta-cho 4259, Midori-ku, Yokohama, Kanagawa 227, Japan
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Abstract

An ArF excimer laser MBE system specially designed for the deposition of ceramic thin films was used to construct atomi-cally defined epitaxial SrCuO2−x films. According to XPS analysis, Cu valence was evaluated to be 2+ in the film as-grown in the presence of 10−7 Torr NO2, but it was less than 2+ in the film prepared in the presence of 10−7Torr 02. In situ XPS depth analysis of as-grown SrCuO2−x film on SrTiO3 substrate revealed the band profile at the interface of the film and substarte. Ceramic superlattices composed of metallic SrCuO2−x (3∼8nm thick) and insulative SrTiO3 (8nm thick) were prepared by sequential heteroepitaxial growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 177
Copyright
Copyright © Materials Research Society 1991

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