Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T07:41:11.287Z Has data issue: false hasContentIssue false
  • English
  • Français

A Novel Preparation Technique Termed “Chemical Annealing” to make a Rigid and Stable Si-Network

Published online by Cambridge University Press:  21 February 2011

Hajime Shirai ,
Jun-Ichi Hanna  and
Isamu Shimizu
Hajime Shirai
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama, 227, Japan
Jun-Ichi Hanna
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama, 227, Japan
Isamu Shimizu
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama, 227, Japan
Get access

Abstract

A novel preparation technique termed “Chemical Annealing (CA)” was developed with aim of making a stable and rigid structure of Si-network. The a-Si:H films were made by the alternate deposition of several tens angstrom thick a-Si:H and the treatment with atomic hydrogen or excited novel gases such as Ar* and He*. Hydrogen contents (CH) and optical gap (Eg) in the film prepared by this tecnique were able to reduced by CH of 1.5at%, and Eg of 1.5eV, respectively at substrate temperature:300C. All of them exhibited high photoconductivities in the level of 10-5 10-4 S/cm under illumination of 100mW/cm2. In the films with CH of 3at% or less, in particular, marked improvement was confirmed in the stability after light soaking. In addition, the time-of-flight measurement revealed a non-dispersive transport and a significant enhancement in the drift mobility of holes up to 0.2cmm2/Vs at room temperature in the film with CH : 5at% and Eg:1.65eV prepared at 300C. Advantages of the CA process are summarized together with the discussion of role of atomic hydrogen, excited novel gases such as Ar* and He* in the growing surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 643
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Jackson, W.B., Marshall, J.M. and Moyer, M.D.: Phys. Rev., B32 (1989) 3609 Google Scholar
[2] Stuztmann, M., Jackson, W.B. and Tsai, C.C.: Phys. Rev., B32(1985) 23 Google Scholar
[3] Stuztmann, M.: Philo. Mag., B33 (1986) L15 CrossRefGoogle Scholar
[4] Jackson, W.B. : Proc. of Int. Con. of 5th PVSEC (Kyoto) (1990) 53 Google Scholar
[5] Street, R.A.: Phys. Rev., 49(1982) 1187 Google Scholar
[6] Pankove, J.I., Lampert, M.A., and Tamg, M.L.: Appl. Phys. Lett., 32 (1978)439 Google Scholar
[7] Perrin, J. and Broekheizen, T. : Mat. Res. Soc. Symp. Proc., 75(1987) 201 Google Scholar
[8] Itabashi, N., Kato, K., Nishiwaki, N., Goto, T., Yamada, C., and Hirota, E.,: Jpn. J. Appl. Phys., 27(1988)L1565, 28(1989)L325Google Scholar
[9] Nights, J.C.: Jpn. J. Appl Phys., Supp 11 (1979) 101 Google Scholar
[10] Perrin, J. and Broekheizen, T.: Mat. Res. Soc. Symp. Proc. 75(1987) 201 CrossRefGoogle Scholar
[11] Matsuda, A. and Goto, T., Mat. Res. Soc. Symp. Proc. (1989)Google Scholar
[12] Tanabe, H., Azuma, M., Shirai, H., Hanna, J. and Shimizu, I.: Mat. Res. Soc. Symp. Proc. Vol. 149 (1989) 17 Google Scholar
[13] Asano, A. : Appl. Phys. Lett., 56(1990) 553 Google Scholar
[14] Shirai, H., Hanna, J. and Shimizu, I.: Jpn. J. Appl. Phys., 30(1991) L881 Google Scholar
[15] Das, D., Shirai, H., Hanna, J. and Shimizu, I. : Jpn. J. Appl. Phys., 30(1991) L239 Google Scholar
[16] Shirai, H., Das, D., Hanna, J. and Shimizu, I. : Proc. of Int. Con. of 5th PVSEC Kyoto) (1990) 59 Google Scholar
[17] Tanaka, K. and Matsuda, A. : Mat. Sci. Rep., 2(1987) 139 Google Scholar
[18] Nakamura, M., Ohno, T., Miyata, K., Konishi, K. : Appl. Phys. Lett., 65(1989) 3061 Google Scholar
[19] Carlson, D.E. and Magee, C.M.: Appl. Phys. Lett., 33 (1978) 81 Google Scholar