Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-24T20:24:02.262Z Has data issue: false hasContentIssue false
  • English
  • Français

Novel Precursors for the Deposition of II-VI Semiconductor Films

Published online by Cambridge University Press:  25 February 2011

Manfred Bochmann  and
Kevin J. Webb
Manfred Bochmann
Affiliation:
School of Chemical Sciences, University of East Anglia, Norwich NR4 7TJ., United Kingdom
Kevin J. Webb
Affiliation:
School of Chemical Sciences, University of East Anglia, Norwich NR4 7TJ., United Kingdom
Get access

Abstract

Highly sterically hindered chalcogenolato complexes M(EC6H2R3-2,4,6)2 (M = Zn, Cd, Hg; E = S, Se, Te; R = Me, Pri, But) have been prepared. Compounds with R -= But are volatile under reduced pressure and are suitable as precursors for the deposition of II-VI films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 149
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Halsall, M.P., Davies, J.J., Nicholls, J.E., Cockayne, B., Wright, P.J. and Russell, G.J., J.Cryst.Growth, 91, 135 (1988), and cited references.Google Scholar
[2] Said, F.F. and Tuck, D.G., Inorg. Chim. Acta, 1 (1982); D. Craig, I.G. Dance and R. Garbutt, Angew. Chem. Int. Ed. Engl. 25, 165 (1986); I.G. Dance, R.G. Garbutt, D.C. Craig and M.L. Scudder, Inorg.Chem. 26, 4057 (1987); I.G. Dance. R.G. Garbutt. D.C. Craig, M.L. Scudder and T.D. Bailey, J.Chem.Soc.Chem.Commun. 1154 (1987); I.G. Dance, R. Garbutt and M.L. Scudder, Inorg. Chem. 29, 1571 (1990); H.B. Bürgi, Helv.Chim.Acta 57, 513 (1974); E. Dubler and E. Gyr, Inorg.Chem. 27, 1466 (1988).Google Scholar
[3] Bochmann, M., Webb, K., Harman, M. and Hursthouse, M.B., Angew. Chem. 102, 703 (1990); Angew. Chem. lnt.Ed. Engl. 29, 638 (1990); M. Bochmann and K. Webb, Abstr.5th lnt.Conf.Metalorg. Vapour Phase Epitax, Aachen 1990, p.205.Google Scholar
[4] Bochmann, M., Webb, K.J., Hursthouse, M.B. and Mazid, M., Angew.Chem., submitted.Google Scholar
[5] Bochmann, M., Webb, K.J., Hursthouse, M.B. and Mazid, M., J.Chem.Soc., Dalton Trans., submitted.Google Scholar