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Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface

Published online by Cambridge University Press:  01 February 2011

F. Ren ,
B. Luo ,
J. Kim ,
R. Mehandru ,
B. P. Gila ,
A. H. Onstine ,
C. R. Abernathy ,
S. J. Pearton ,
R. Fitch  and
J. Gillespie
...Show all authors
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA
B. Luo
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA
J. Kim
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA
R. Mehandru
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA
B. P. Gila
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
A. H. Onstine
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
C. R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
R. Fitch
Affiliation:
Air Force Research Laboratory, Sensors Directorate Wright-Patterson AFB, OH 45433, USA
J. Gillespie
Affiliation:
Air Force Research Laboratory, Sensors Directorate Wright-Patterson AFB, OH 45433, USA
T. Jenkins
Affiliation:
Air Force Research Laboratory, Sensors Directorate Wright-Patterson AFB, OH 45433, USA
J. Sewell
Affiliation:
Air Force Research Laboratory, Sensors Directorate Wright-Patterson AFB, OH 45433, USA
D. Via
Affiliation:
Air Force Research Laboratory, Sensors Directorate Wright-Patterson AFB, OH 45433, USA
A. Crespo
Affiliation:
Air Force Research Laboratory, Sensors Directorate Wright-Patterson AFB, OH 45433, USA
Y. Irokawa
Affiliation:
Toyota Central Research and Development Laboratories, Inc., Nagakute, Aichi, 480-1192, Japan
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Abstract

Both MgO and Sc2O3 are shown to provide low interface state densities (in the 1011 eV-1 cm-2 range) on n- and p-GaN, making them useful for surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs) and also gate dielectrics for metal-oxide semiconductor(MOS) devices. Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of ∼3 × 1012 cm-2. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN diodes and Sc2O3 passivated HEMT are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C4.1
Copyright
Copyright © Materials Research Society 2003

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