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A Novel Model for Solid State Reactions in Metal-Silicon Diffusion Couples

Published online by Cambridge University Press:  25 February 2011

Lin Zhang  and
Douglas G. Ivey
Lin Zhang
Affiliation:
Department of Mining, Metallurgical, and Petroleum Engineering, University of Alberta, Edmonton, Alberta, Canada, T6G 2G6
Douglas G. Ivey
Affiliation:
Department of Mining, Metallurgical, and Petroleum Engineering, University of Alberta, Edmonton, Alberta, Canada, T6G 2G6
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Abstract

In this study, a novel model has been proposed to describe reactions in thin metal film/silicon diffusion couples. A reactive interface in a metal-Si diffusion couple is considered to be a reaction region, and a reaction process in this region is divided into three steps. Several physical quantities have been defined to describe each of these steps, i.e., the diffusion flux of moving reactant to the reaction region, J; the release rate of nonmoving reactant, r, and the formation rate of the growing phase, F. The relationship between these quantities is demonstrated by means of a reaction process plot, which is also developed in this study. A semiquantitative calculation of the reaction process plot has been done for Mn-Si and Ti-Si systems. The results show that the plots can be successfully used to predict suicide formation sequences.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 257
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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