Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T01:55:21.091Z Has data issue: false hasContentIssue false
  • English
  • Français

Novel Mid-Infrared Lasers with Compressively Strained InAsSb Active Regions

Published online by Cambridge University Press:  10 February 2011

S. R. Kurtz ,
R. M. Biefeld  and
A. A. Allerman
S. R. Kurtz
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico, 87185, USA
R. M. Biefeld
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico, 87185, USA
A. A. Allerman
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico, 87185, USA
Get access

Abstract

Mid-infrared lasers grown by MOCVD with ALAsSb claddings and strained InAsSb active regions are reported. A 3.8–3.9 μm injection laser with a pseudomorphic InAsSb multiple quantum well active region lased at 210 K under pulsed operation. A semi-metal layer acts as an internal electron source for the injection laser. An optically pumped laser with an InAsSb/InAsP strained-layer superlattice active region was demonstrated at 3.7 μm, 240 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 23
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Eglash, S. J. and Choi, H. K., Appl. Phys. Lett. 4, 833 (1994).Google Scholar
[2] Choi, H.K. and Turner, G.W., Appl. Phys. Lett. 67, 332 (1995)‥Google Scholar
[3] Kurtz, S.R., Biefeld, R.M., Allerman, A.A., Howard, A.J., Crawford, M.H. and Pelczynski, M.W., Appl. Phys. Lett. 68 1332 (1996).Google Scholar
[4] Menna, R. J., Garbuznov, D., Martinelli, R. U., and Olsen, G. H., (to be published).Google Scholar
[5] Van de Walle, Chris G., Phys. Rev. B 39, 1871 (1989).Google Scholar
[6] Biefeld, R. M., Baucom, K. C., and Kurtz, S. R., J. Crys. Growth 137, 231 (1994).Google Scholar
[7] Allerman, A. A., Biefeld, R. M., and Kurtz, S. R., Appl. Phys. Lett. 69, 465 (1996).Google Scholar
[8] Miles, R. H. (private communication).Google Scholar
[9] Kurtz, S. R. and Biefeld, R. M., Appl. Phys. Lett. 66, 364 (1995).Google Scholar
[10] Kurtz, S. R., Biefeld, R. M., and Howard, A. J., Appl. Phys. Lett. 67, 3331 (1995).Google Scholar
[11] Malin, J. I., Meyer, J. R., Felix, C. L., Lindle, J. R., Goldberg, L., Hoffman, C. A., Bartoli, F. J., Lin, C. H., Chang, P. C., Murrv, S. J., Yang, R. Q., and Pei, S. S., Appl Phys. Lett. 68, 2976 (1996).Google Scholar
[12] Meyer, J. R., Vurgaftman, I., Yang, R. Q., and Ram-Mohan, L. R., Elect. Lett. 32, 45 (1996).Google Scholar
Yang, R. Q., Lin, C. H., Chang, P. C., Murry, S. J., Zhang, D., Pei, S. S., Kurtz, S. R., Chu, A. N., and Ren, F., Elect. Lett. 32, 1621 (1996).Google Scholar