Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-20T06:42:16.327Z Has data issue: false hasContentIssue false
  • English
  • Français

A Novel Method for the growth of Low Temperature Silicon Structures for 3-D Flash Memory Devices

Published online by Cambridge University Press:  01 February 2011

Thomas A Mih ,
Richard BM Cross  and
Shashi Paul
Thomas A Mih
Affiliation:
[email protected], De Montfort University, Emerging Technologies Research Centre, Leicester, United Kingdom
Richard BM Cross
Affiliation:
[email protected], De Montfort University, Emerging Technologies Research Centre, Leicester, United Kingdom
Shashi Paul
Affiliation:
[email protected], De Montfort University, Emerging Technologies Research Centre, Leicester, United Kingdom
Get access

Abstract

Low temperature (≤400°C) growth of polycrystalline silicon (poly-Si) is carried out using plasma-enhanced chemical vapour deposition. After an initial preparation step poly-Si was grown on the substrates. Optical band gap studies of the poly-Si films have been correlated to hydrogen content of the films as well as to their photoconductivity. Furthermore, the suitability of these films for use as information storage materials for future generation 3-D flash memory devices is investigated using capacitance-voltage (C-V) measurements via metal-insulator-semiconductor device structures. C-V analysis indicates strong charge storage behavior for the poly-Si films.

Keywords

memorysemiconductingplasma-enhanced CVD (PECVD) (chemical reaction)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1112: Symposium E – Materials and Technologies for 3-D Integration , 2008 , 1112-E05-03
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]. Tiwari, S., Rana, F., Hanafi, H., Hartstein, A., Crabbe, E. F. and Chan, K.; J. Appl. Phys. Lett., 68(10), (1996), 1377 Google Scholar
[2]. Paul, S., IEEE Transactions on Nanotechnology 6, 2, (2007). 191–195 Google Scholar
[3]. Koliopoulou, S., Dimitrakis, P., Normand, P., Paul, S., Pearson, C., Molloy, A., Petty, M. C. and Tsoukalas, D., J. Appl. Phys. 94(8), (2003), 5234 Google Scholar
[4]. Koliopoulou, S., Dimitrakis, P., Goustouridis, D., Normand, P., Pearson, C., Petty, M.C., Radamson, H. and Tsoukalas, D., Microelectronic Engineering, 83, (2006), 1563 Google Scholar
[5]. Paul, S., (unpublished)Google Scholar
[6]. Jin, Z., Bhat, G. A., Yeung, M., Kwok, H. S. and Wong, M., J. Appl. Phys. 84(1), (1998), 194 Google Scholar
[7]. Meng, Z., Wang, M. and Wong, M., IEEE Trans. Electron Devices 47(2), (2000), 404 Google Scholar
[8]. Lee, S. W. and Joo, S. K., IEEE electron Device Lett. 17(4), (1996), 160 Google Scholar
[9]. Paul, S., Pearson, C., Molloy, A., Cousins, M. A., Green, M., Kolliopoulou, S, Dimitrakis, P., Normand, P., Tsoukalas, D. and Petty, M. C., Nano Lett. 3(4), (2003), 533 Google Scholar