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A Novel Method for Low-Resistivity Metal-Interconnection by Using Metallic Functional Liquids and Catalytically Generated Hydrogen Atoms

Published online by Cambridge University Press:  17 May 2012

Nguyen T. T. Kieu ,
Keisuke Ohdaira ,
Tatsuya Shimoda  and
Hideki Matsumura
Nguyen T. T. Kieu
Affiliation:
School of Materials Science, Japan Advanced institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa, 923-1292, Japan.
Keisuke Ohdaira
Affiliation:
School of Materials Science, Japan Advanced institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa, 923-1292, Japan.
Tatsuya Shimoda
Affiliation:
School of Materials Science, Japan Advanced institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa, 923-1292, Japan.
Hideki Matsumura
Affiliation:
School of Materials Science, Japan Advanced institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa, 923-1292, Japan.
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Abstract

A novel method to make low-resistivity metal lines in assembled silicon (Si) integrated circuit (IC) chips or other semiconductor chips with high-speed and low-cost is demonstrated. In the method, functional silver (Ag)-liquid (Ag-ink) which contains Ag nanoparticles (NPs) in organic solution is used to draw metal-lines in trenches formed on a plastic substrate by imprint technology. Surface energy of trenches is modified by exposing the substrate to ultra-violet (UV) light with the purpose of concentrating the functional Ag-ink into trenches by capillary effect in order to connect with electrodes of Si chips. The resistivity of such metal-lines can be lowered to 4×10-6 Ωcm by exposing the Ag metal-lines to hydrogen (H) atoms generated by catalytic cracking reaction with a heated tungsten catalyzer. X-ray photoelectron spectroscopy (XPS) proves that H atoms can remove organic compounds surrounding Ag NPs, resulting in the low-temperature sintering of NPs as confirmed by scanning electron microscopy (SEM). The method is promising for low-cost fabricating of IC cards or other electronic devices utilizing assemble of many semiconductor chips.

Keywords

ink-jet printingmicroelectronicssintering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1401: Symposium T – Large-Area Processing and Patterning for Active Optical and Electronic Devices III , 2012 , mrsf11-1401-t05-30
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Kieu, N.T.T., Ohdaira, K., Shimoda, T., Matsumura, H., J. Vac. Sci. Technol. B 28, 775 (2010).Google Scholar
2. Lee, H.H., Chou, K.S., Huang, K.C., Nanotechnology 16, 2436 (2005).Google Scholar
3. Goo, Y.S., Lee, Y.I., Kim, N., Lee, K.J., Yoo, B., Hong, S.J., Kim, J.D., Choa, Y.H., J. Surface Coating and Technology 205, 5369 (2010).Google Scholar
4. Zhang, D., Dougal, S.M., Yeganeh, M.S., Langmuir 16, 4528 (2000).Google Scholar
5. Hashimoto, K., Masuda, A., Matsumura, H., Ishibashi, T., Takao, K., J. Thin Solid Films 501, 326 (2006).Google Scholar
6. Greer, J. R., Street, R.A., Acta Materialia 55, 6345 (2007).Google Scholar