Hostname: page-component-5cf477f64f-zrtmk Total loading time: 0 Render date: 2025-04-03T06:43:18.090Z Has data issue: false hasContentIssue false
  • English
  • Français

NOVEL MEASUREMENT OF THE BAND DISCONTINUITIES IN (Al,Ga)As HETEROJUNCTIONS

Published online by Cambridge University Press:  28 February 2011

B. A. WILSON ,
P. DAWSON ,
C. W. TU  and
R. C. MILLER
B. A. WILSON
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
P. DAWSON
Affiliation:
Philips Research Laboratories, Redhill, Surrey, England
C. W. TU
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. C. MILLER
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Get access

Abstract

A novel method has been used to obtain a direct and accurate measure of the valence-band discontinuity AlyGa1−yAs/AlAs heterojunctions in quantum-well structures. The technique takes advantage of the crossover occurring at a critical Al concentration above which the indirect X minimum in the AlAs becomes the lowest-energy conduction band in the system. Within these “staggered” band alignment structures, photoexcited electrons and holes are spatially separated, and recombination occurs across the interface. The resulting emission fixes the valence-band offset to within 1% without accurate knowledge of other system parameters, such as effective masses and exciton or dopant binding energies. These measurements represent the first direct optical confirmation of staggered band alignments in this technologically important material system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 307
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Dingle, R., Festk6rperproblem 1,5 21 (1975).Google Scholar
2. Watanabe, M. O., Yoshida, J., Mashita, M., Nakanisi, T. and Hojo, A., J. Appl. Phys. 57, 5340 (1985); Extended Abstracts of the 16th Conference on Solid State Devices, Kobe, 1974, p. 181.Google Scholar
3. Okumura, H., Misawa, S., Yoshida, S. and Gondo, S., Appl. Phys. Lett. 46, 377 (1985).Google Scholar
4. Batey, J., Wright, S. L. and DiMaria, D. J., J. Appl. Phys. 52, 484 (1985); Batey, J. and Wright, S. L., Proc. of the Second International Conference on Modulated Semiconductor Structures, Kyoto, 1985, to be published in Surf. Sci.Google Scholar
5. Hickmott, T. W., Solomon, P. M., Fischer, R. and Morkoc, H., J. Appl. Phys. 57 2884 (1985).Google Scholar
6. Meynadier, H. H., Delande, C., Bastard, G., Voos, M., Alexandre, F. and Lievin, J. L., Phys. Rev. B31, 5539 (1985).Google Scholar
7. Arnold, D., Ketterson, A., Henderson, T., Klem, J. and Morkoc, H., Appl. Phys. Lett. 45, 1237 (1984); J. Appl. Phys. 57 2880 (1985).Google Scholar
8. Wang, W. I., Mendez, E. E. and Stern, F., Appl. Phys. Lett. 45 639 (1984); Wang, W. I. and Stern, F., J. Vac. Soc. Technol. B, 1280 (1985); Wang, W. I., Kuan, T. S., Mendez, E. E., and Esaki, L., Phys. Rev. B31, 6890 (1985).Google Scholar
9. Drummond, T. J. and Fritz, I. J., Appl. Phys. Lett. 47, 284 (1985).Google Scholar
10. Miller, R. C., Kleinman, D. A. and Gossard, A. C., Phys. Rev. B29 7085 (1984); Phys. Rev. B32, 5443 (1985).Google Scholar
11. Horikoshi, Y., Fischer, A. and Ploog, K., Phys. Rev. B31, 7859 (1985).Google Scholar
12. Langer, J. M. and Heinrich, H., Phys. Rev. Lett. 55,1414 (1985).Google Scholar
13.0. Glembocki, J., Shanabrook, B. V., Bottka, N., Beard, W. T. and Comas, J., Appl. Phys. Lett. 46 970 (1985).CrossRefGoogle Scholar
14. Casey, H. C. and Panish, M. B., Heterostructure Lasers, (Academic Press, 1978), p. 17.Google Scholar
15. Dawson, P., Wilson, B. A., Tu, C. W. and Miller, R. C., to be published.Google Scholar
16. Miller, R. C., Gossard, A. C., Tsang, W. T. and Munteanu, O., Solid State Comm. 43, 519 (1982).Google Scholar
17. Fischer, R., Hopkins, C. G., Evans, C. A., Drummond, T. J., Lyons, W. G., Klem, J., Colvard, C. and Morkoc, H., GaAs and Related Compounds, edited by Stillman, V. G. E., (London Institute of Physics, 1983), p. 157.Google Scholar
18. Heiblum, M., Nathan, M. I. and Eizenberg, M., Appl. Phys. Lett. 47, 503 (1985).CrossRefGoogle Scholar
19. Abstreiter, G., Prechtel, U., Weimann, G. and Schlapp, W., Proc. of the Second International Conference on Modulated Semiconductor Structures, Kyoto, 1985, to be published in Surf. Sci.Google Scholar
20. Miller, N. C., Zemon, S., Werber, G. P. and Powazinik, W., J. Appl. Phys. 57, 512 (1985).CrossRefGoogle Scholar