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NOVEL MEASUREMENT OF THE BAND DISCONTINUITIES IN (Al,Ga)As HETEROJUNCTIONS

Published online by Cambridge University Press:  28 February 2011

B. A. WILSON ,
P. DAWSON ,
C. W. TU  and
R. C. MILLER
B. A. WILSON
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
P. DAWSON
Affiliation:
Philips Research Laboratories, Redhill, Surrey, England
C. W. TU
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. C. MILLER
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

A novel method has been used to obtain a direct and accurate measure of the valence-band discontinuity AlyGa1−yAs/AlAs heterojunctions in quantum-well structures. The technique takes advantage of the crossover occurring at a critical Al concentration above which the indirect X minimum in the AlAs becomes the lowest-energy conduction band in the system. Within these “staggered” band alignment structures, photoexcited electrons and holes are spatially separated, and recombination occurs across the interface. The resulting emission fixes the valence-band offset to within 1% without accurate knowledge of other system parameters, such as effective masses and exciton or dopant binding energies. These measurements represent the first direct optical confirmation of staggered band alignments in this technologically important material system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 307
Copyright
Copyright © Materials Research Society 1986

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