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Novel Growth Techniques for the Fabrication of Photonic Integrated Circuits

Published online by Cambridge University Press:  26 February 2011

G. Coudenys ,
G. Vermeire ,
Y. Zhu ,
I. Moerman ,
L. Buydens ,
P. Van Daele  and
P. Demeester
G. Coudenys
Affiliation:
University of Gent-IMEC, Laboratory of Electromagnetics and Acoustics, Sint-Pietersnieuwstraat 41, B-9000 Gent, Belgium
G. Vermeire
Affiliation:
University of Gent-IMEC, Laboratory of Electromagnetics and Acoustics, Sint-Pietersnieuwstraat 41, B-9000 Gent, Belgium
Y. Zhu
Affiliation:
University of Gent-IMEC, Laboratory of Electromagnetics and Acoustics, Sint-Pietersnieuwstraat 41, B-9000 Gent, Belgium
I. Moerman
Affiliation:
University of Gent-IMEC, Laboratory of Electromagnetics and Acoustics, Sint-Pietersnieuwstraat 41, B-9000 Gent, Belgium
L. Buydens
Affiliation:
University of Gent-IMEC, Laboratory of Electromagnetics and Acoustics, Sint-Pietersnieuwstraat 41, B-9000 Gent, Belgium
P. Van Daele
Affiliation:
University of Gent-IMEC, Laboratory of Electromagnetics and Acoustics, Sint-Pietersnieuwstraat 41, B-9000 Gent, Belgium
P. Demeester
Affiliation:
University of Gent-IMEC, Laboratory of Electromagnetics and Acoustics, Sint-Pietersnieuwstraat 41, B-9000 Gent, Belgium
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Introduction:

The fabrication of Photonic Integrated Circuits (PIC) requires the development of advanced growth and processing techniques. One of the major problems in the fabrication of PICs is the monolithic integration of passive and active waveguiding structures with a different bandgap. This is schematically shown in figure 1 where a laser, waveguide and detector are integrated on the same substrate. The following relationship between the different bandgaps is required : Eg (detector) < Eg (laser) < Eg (waveguide). One of the most advanced PICs is certainly a coherent receiver chip where a local DFB laser oscillator is integrated with a Y-junction, 3-dB splitter and balanced photodetector pair [1,2,3]. Current integration schemes are mostly based on the use of different epitaxial growth steps to obtain the different bandgap materials on the same substrate. In order to improve yield and performance it is required to reduce the number of growth steps by using special growth techniques. In this paper we will briefly describe some of the recent developments in advanced growth techniques. A more detailed description will be given of our recent work based on selective growth and shadow masked growth using Metal Organic Vapour Phase Epitaxy (MOVPE).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 15
Copyright
Copyright © Materials Research Society 1992

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References

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