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Novel Dynamic Scanning Microscope Probe and its Application to Local Electrical Measurement in an Ion Sensitive Field Effect Transistor

Published online by Cambridge University Press:  01 February 2011

T. Akiyama ,
K. Suter ,
N. F. de Rooij  and
U. Staufer
T. Akiyama
Affiliation:
Institute of Microtechnology, University of Neuchâtel, Rue Jaquet-Droz 1, CH-2007 Neuchâtel, Switzerland
K. Suter
Affiliation:
Institute of Microtechnology, University of Neuchâtel, Rue Jaquet-Droz 1, CH-2007 Neuchâtel, Switzerland
N. F. de Rooij
Affiliation:
Institute of Microtechnology, University of Neuchâtel, Rue Jaquet-Droz 1, CH-2007 Neuchâtel, Switzerland
U. Staufer
Affiliation:
Institute of Microtechnology, University of Neuchâtel, Rue Jaquet-Droz 1, CH-2007 Neuchâtel, Switzerland
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Abstract

A unique self-actuating and self-sensing probe, which is based on a quartz tuning fork and a microfabricated cantilever, is presented for dynamic scanning probe microscopy. The probing tip can be electrically connected to an external source or measure unit. The sensitivity of the drain-source current of an ion sensitive field effect transistor (ISFET) was investigated as a function of the probe position in order to assess the potential of the probe in device testing, where its non-optical read-out mechanism may proof to be a particular advantage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 838: Symposium O – Scanning Probe and Other Novel Microscopies of Local Phenomena in Nanostructured Materials , 2004 , O11.1
Copyright
Copyright © Materials Research Society 2005

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References

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