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A Novel Approach to the Assessment of Semiconductor Hetero-Interfaces in Multilayer Structures

Published online by Cambridge University Press:  28 February 2011

J.S. Rimmer ,
M Missous ,
A.R. Peaker  and
B. Hamilton
J.S. Rimmer
Affiliation:
(Dept. of Electrical Engineering and Electronics)The Centre for Electronic Materials, University of Manchester Institute of Science and Technology, P.O. Box 88, Manchester M60 1QD, United Kingdom
M Missous
Affiliation:
(Dept. of Electrical Engineering and Electronics)The Centre for Electronic Materials, University of Manchester Institute of Science and Technology, P.O. Box 88, Manchester M60 1QD, United Kingdom
A.R. Peaker
Affiliation:
(Dept. of Electrical Engineering and Electronics)The Centre for Electronic Materials, University of Manchester Institute of Science and Technology, P.O. Box 88, Manchester M60 1QD, United Kingdom
B. Hamilton
Affiliation:
(Dept of Pure and Applied Physics) The Centre for Electronic Materials, University of Manchester Institute of Science and Technology, P.O. Box 88, Manchester M60 1QD, United Kingdom
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Abstract

We demonstrate the novel use of CV simulation to determine the level of charge at each interface in multilayer GaAs/AlGaAs heterostructures. The gettering of charged centres at the earliest grown interfaces is quantitatively appraised and the parallel application of PL decay lifetime measurements determines their effectiveness as recombination centres. A direct relationship is found between the magnitude of the charged states and the recombination velocity. Estimates of a 1eV activation energy and a hole capture cross section of 10−15 cm2 were also obtained. This suggests that the dominant recombination centre could be observed as a hole trap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 389
Copyright
Copyright © Materials Research Society 1990

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References

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